The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching ratios >10(4) and long retention times of >10(4)...
The thermal oxidation of submicron metallic Zn particles was studied as a method to form nanostructured ZnO films. The particles used for this work were characterized by electron microscopy, x ray diffraction, and thermal analysis to evaluate the Zn-ZnO core shell structure, surface morphology, and oxidation characteristics. Significant nanostructural changes...