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  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    -mode Device Operation – The Hoffman Model ................. 23 2.3 TRANSPARENT THIN-FILM TRANSISTOR

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed