Polycrystalline ferroelectric lead-free 85 mol% (Bi₀.₅Na₀.₅)TiO₃–10 mol% (Bi₀.₅K₀.₅)TiO₃–5 mol% BaTiO₃ (85BNT–10BKT–5BT) thin films were fabricated via chemical solution deposition on platinized silicon substrates. The permittivity and dielectric loss at 1 kHz were 610 and ∼3.5%, respectively. The ferroelectric properties at room temperature and as a function of the temperature up...