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Creator:: Park, Sangmoon, Keszler, Douglas A., Valencia, Melinda M., Hoffman, Randy L., Bender, Jeffrey P., and Wager, John F.
Abstract:: p-type conducting films of α- BaCu₂S₂ have been deposited onto glass and KBr substrates, yielding a conductivity of 17 S/cm and a Hall mobility of 3.5 cm²/Vs. For a 430-nm-thick film, the optical transparency approaches 90% in the visible portion of the spectrum at 650 nm, and a transparency of...
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Full Text:: Institute of Physics.@DOI: 10.1063/1.1485133# id el nd n ve ria e fig u y be - w m he r e pa ed ai ob ie

Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Barati, Alireza, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the...
Resource Type:: Article
Full Text:: :10.1063/1.3405757� One of the contemporary challenges of applied physics is the advancement of

Creator:: Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, and Keszler, Douglas A.
Abstract:: BaCuQF (Q=S,Se) materials, candidate transparent p-type conductors, were prepared by solid-state reaction, and their bulk electrical and optical properties were evaluated. The room-temperature Seebeck coefficient and electrical conductivity of undoped BaCuQF pellets were +56 μV/K and 0.088 S/cm, respectively, for the sulfide fluoride, and +32 μV/K and 0.061 S/cm, respectively,...
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Full Text:: Physics.@DOI: 10.1063/1.1571224# el a ed o , ls tic t i re e st te t al Q r re y- e- d re k x re th

Creator:: Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, Keszler, Douglas A., Hirano, Masahiro, and Hosono, Hideo
Abstract:: The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals,...
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Full Text:: Physics. �DOI: 10.1063/1.2358828� I. INTRODUCTION p-type conductivity in wide band gap semiconductors is

Creator:: Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., and Keszler, Douglas A.
Abstract:: Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50 cm² V‾¹ s‾¹ are obtained for devices post-deposition annealed at 300 and 600 °C, respectively. TTFTs processed at 300 and 600 °C yield devices...
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Full Text:: configurations. ©2005 American Institute of Physics. [DOI: 10.1063/1.1843286] The recent development of

Creator:: Newhouse, Paul F., Park, C.-H., Keszler, Douglas A., Tate, J., Nyholm, P. S., and Tate, Janet
Abstract:: High electron mobility thin films of In₂₋ₓWₓO₃₊y(0≤x≤0.075) were prepared on amorphous SiO₂ and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm² /Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x~0.03....
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Full Text:: %. © 2005 American Institute of Physics. �DOI: 10.1063/1.2048829� Refractory metal doping of In2O3 has been

Creator:: Cowell, E. William, III, Muir, Sean W., Keszler, Douglas A., and Wager, John F.
Abstract:: See article for Abstract.
Resource Type:: Article
Full Text:: . [http://dx.doi.org/10.1063/1.4839695] I. INTRODUCTION Electron emission from a metal surface into

Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Hein, Corinna, Mayer, Thomas, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: BaCuChF (Ch=S,Se,Te) surfaces and BaCuSeF interfaces with zinc phthalocyanine (ZnPc) were studied by photoelectron spectroscopy. BaCuChF compounds oxidize when exposed to ambient atmosphere. Se capping layers were studied as a means to produce representative surfaces for photoelectron spectroscopic measurements. Decapped BaCuSeF surfaces remain O-free and C-free when the Se layer...
Resource Type:: Article

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