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Internal photoemission spectroscopy determination of barrier heights between Ta-based amorphous metals and atomic layer deposited insulators

Creator:

Jenkins, M. A., McGlone, J. M., Wager, J. F., and Conley, J. F., Jr.

Abstract:

The energy barrier heights between two recently reported Ta-based amorphous metals (TaWSi and TaNiSi), TaN, and atomic layer deposited Al2O3 and HfO2 insulators are measured in metal/insulator/metal (MIM) structures with Au top electrodes using internal photoemission (IPE) spectroscopy. For Al2O3, the Ta-based metal barrier heights, phi(Bn), increase with increasing metal...

Resource Type:

Article

Full Text:

. Conley, Jr., Phys. Status Solidi RRL – Rapid Res. Lett. 12, 1700437 (2018). 15J. M. McGlone, K. R. Olsen