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Creator:: Vidal, Julien, Lany, Stephan, d’Avezac, Mayeul, Zunger, Alex, Zakutayev, Andriy, Francis, Jason, and Tate, Janet
Abstract:: SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has...
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Full Text:: Institute of Physics. [doi:10.1063/1.3675880] Earth abundancy is considered to be a major criterion for a

Creator:: Vidal, Julien, Lany, Stephan, Francis, Jason, Kokenyesi, Robert, and Tate, Janet
Abstract:: Emergence of a terawatt scalable photovoltaic (PV) thin film technology is currently impeded by the limited supply of relatively rare elements like In or Te, which has spurred active research in recent years on earth-abundant PV materials. Instead of searching for alternative PV materials, we approach the problem here by...
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Full Text:: photovoltaic SnS by alloying. Journal of Applied Physics, 115(11), 113507. doi:10.1063/1.4868974 10.1063

Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Barati, Alireza, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the...
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Full Text:: :10.1063/1.3405757� One of the contemporary challenges of applied physics is the advancement of

Creator:: Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, and Keszler, Douglas A.
Abstract:: BaCuQF (Q=S,Se) materials, candidate transparent p-type conductors, were prepared by solid-state reaction, and their bulk electrical and optical properties were evaluated. The room-temperature Seebeck coefficient and electrical conductivity of undoped BaCuQF pellets were +56 μV/K and 0.088 S/cm, respectively, for the sulfide fluoride, and +32 μV/K and 0.061 S/cm, respectively,...
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Full Text:: Physics.@DOI: 10.1063/1.1571224# el a ed o , ls tic t i re e st te t al Q r re y- e- d re k x re th

Creator:: Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, Keszler, Douglas A., Hirano, Masahiro, and Hosono, Hideo
Abstract:: The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals,...
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Full Text:: Physics. �DOI: 10.1063/1.2358828� I. INTRODUCTION p-type conductivity in wide band gap semiconductors is

Creator:: Nagarajan, R., Draeseke, A. D., Sleight, A. W., and Tate, Janet
Abstract:: CuCr₁₋ₓMgₓO₂, a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO₂ is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity...
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Full Text:: : 10.1063/1.1372636# h f of n s, bl ce f y ha ive e th ied w- and O ac- in te s nd a hed 90 be

Creator:: Newhouse, Paul F., Park, C.-H., Keszler, Douglas A., Tate, J., Nyholm, P. S., and Tate, Janet
Abstract:: High electron mobility thin films of In₂₋ₓWₓO₃₊y(0≤x≤0.075) were prepared on amorphous SiO₂ and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm² /Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x~0.03....
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Full Text:: %. © 2005 American Institute of Physics. �DOI: 10.1063/1.2048829� Refractory metal doping of In2O3 has been

Creator:: Hoffman, R. L., Wager, J. F., Jayaraj, M. K., and Tate, Janet
Abstract:: Transparent p – i – n heterojunction diodes are fabricated using heavily doped, p-type CuYO₂ and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range −4–4 V. The...
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Creator:: Zakutayev, Andriy, Tate, Janet, Platt, Heather A. S., Keszler, Douglas A., Hein, Corinna, Mayer, Thomas, Klein, Andreas, and Jaegermann, Wolfram
Abstract:: BaCuChF (Ch=S,Se,Te) surfaces and BaCuSeF interfaces with zinc phthalocyanine (ZnPc) were studied by photoelectron spectroscopy. BaCuChF compounds oxidize when exposed to ambient atmosphere. Se capping layers were studied as a means to produce representative surfaces for photoelectron spectroscopic measurements. Decapped BaCuSeF surfaces remain O-free and C-free when the Se layer...
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Creator:: Kykyneshi, R., Nielsen, B. C., Tate, Janet, Li, J., and Sleight, A. W.
Abstract:: Transport and structural properties of Mg-doped and O-intercalated sintered powders and polycrystalline films of CuSc₁₋ₓMgₓO[subscript 2+y] are reported. Substitution of Mg for Sc systematically increases the p-type conductivity in CuSc₁₋ₓMgₓO₂ sintered powders, producing a maximum conductivity of 0.015 S/cm at x≈0.06. A similar level of conductivity is observed in transparent...
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Full Text:: polymorph. ©2004 American Institute of Physics. [DOI: 10.1063/1.1806256] I. INTRODUCTION Oxides with the

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