The experimental procedure for reactively sputtering
films of silicon nitride together with the methods for
measuring the film thickness have been investigated.
Some of the properties of these nitride films were studied.
These properties included: infrared spectrum,
etching properties, and index of refraction. The adherence
of the films was also...
Vacuum evaporated dielectrics for use in MOS structures
were studied in this research project. Dielectric
films were deposited on substrates by electron bombardment
evaporation of sapphire and quartz source materials.
These deposited films were studied using infrared spectroscopy,
index of refraction, density, and dielectric constant
measurements. Etching tests were also...