A comparison was made of Al₂O₃ films deposited on Si via prompt inorganic condensation (PIC)
and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing
temperature indicate that the solution-processed PIC films, annealed at 500°C, exhibit lower
leakage and roughly equivalent breakdown strength in comparison to ALD films....
In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the...
BaCuChF (Ch=S,Se,Te) surfaces and BaCuSeF interfaces with zinc phthalocyanine (ZnPc) were studied by photoelectron spectroscopy. BaCuChF compounds oxidize when exposed to ambient atmosphere. Se capping layers were studied as a means to produce representative surfaces for photoelectron spectroscopic measurements. Decapped BaCuSeF surfaces remain O-free and C-free when the Se layer...