Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS₂ uniformly across 150mm diameter SiO₂/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl5 and H₂S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E¹₂g) and out-of-plane...