We have used the modal expansion of the wave function in the discontinuity region based on the superposition principle together with a mode-matching technique to investigate the transmission characteristics of semiconductor quantum wire structures with discontinuities. Our calculations compare quite well with published results for the theoretical transmission coefficient and...
Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of...