The use of double-diffused n-type MOS transistor
(DN-MOS) in a complementary MOS random-access-memory (CMOS
RAM) cell is the main objective of this investigation.
DN-MOS transistors and conventional p-channel MOS
transistors on the same chip have been successfully fabricated.
Process sequence effects on device threshold voltage
and channel length are discussed....
A non-volatile electrically alterable read-only memory using
an MOS field effect transistor with a threshold voltage which depended
upon the position of ionic charges for its memory was fabricated.
The conventional silicon dioxide layer was replaced by a composite
layer consisting of thermal silicon dioxide, electron beam
evaporated aluminum oxide,...
The object of this work was to design and fabricate an integrated circuit using Integrated Injection Logic. Integrated Injection Logic (I[superscript 2] L) is a relatively new field and has many inherent advantages. These have been exploited in this work. Logic for the desired functions was designed and implemented in...
The effects of roadbuilding, logging and burning upon stream
runoff responses to individual storms are evaluated for the Alsea
experimental watersheds, located in the Oregon Coast Range, The
parameters analyzed are peak discharge, induced peak discharge,
time-to-peak, and storm-runoff volume. The volume parameter is
further sub-divided into total, quick, delayed,...
Kinetics of cell division in the intestinal epithelial proliferative cells (cell nests) of the rough-skinned newt, Taricha granulosa, were studied using tritiated thymidine autoradiography and the mitotic arresting properties of colcemid. Percent labeled mitoses (PLM) curves were drawn from the autoradiographic data from two separate experiments in which the newts...