The object of this work was to design and fabricate an integrated circuit using Integrated Injection Logic. Integrated Injection Logic (I[superscript 2] L) is a relatively new field and has many inherent advantages. These have been exploited in this work. Logic for the desired functions was designed and implemented in...
Kinetics of cell division in the intestinal epithelial proliferative cells (cell nests) of the rough-skinned newt, Taricha granulosa, were studied using tritiated thymidine autoradiography and the mitotic arresting properties of colcemid. Percent labeled mitoses (PLM) curves were drawn from the autoradiographic data from two separate experiments in which the newts...
A non-volatile electrically alterable read-only memory using
an MOS field effect transistor with a threshold voltage which depended
upon the position of ionic charges for its memory was fabricated.
The conventional silicon dioxide layer was replaced by a composite
layer consisting of thermal silicon dioxide, electron beam
evaporated aluminum oxide,...
Problems with Hall devices for instructional use in undergraduate laboratories stimulated this investigation for development of rugged, easily constructed, inexpensive, electrically reproducible Hall devices with high output voltage. Silicon was chosen as the Hall-plate material on the basis of cost and availability. Advantages and disadvantages of various plate shapes, sizes,...
The use of double-diffused n-type MOS transistor
(DN-MOS) in a complementary MOS random-access-memory (CMOS
RAM) cell is the main objective of this investigation.
DN-MOS transistors and conventional p-channel MOS
transistors on the same chip have been successfully fabricated.
Process sequence effects on device threshold voltage
and channel length are discussed....
The MOS tetrode transistor is studied in this project.
This device is ideally suited for high frequency and
switching application.
In effect it is the solid state
analogy of a multigrid vacuum tube performing a very useful
multigrid function.
A new structure is developed for
p-channel 10 ohm-cm. silicon substrate...
The influence of surface fields on the breakdown voltage
is studied experimentally for p⁺-n silicon diodes with
a junction depth of 0.5μ in order to improve the curvature-
limited breakdown of the diffused, shallow-collector
junction of a microwave transistor.
Devices with a gap in the gate metal electrode are
also...