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Filtering by: Subject Metal oxide semiconductor field-effect transistors Remove constraint Subject: Metal oxide semiconductor field-effect transistors Decade 1980-1989 Remove constraint Decade: 1980-1989 Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Creator:

Prasad, S. Jayasimha

Resource Type:

Dissertation

Full Text:

the GaAs MESFET (Metal-Semiconductor Field Effect 2 Transistor) technology has evolved in recent
Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

Creator:

Lam, Steven C. F.

Abstract:

The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...

Resource Type:

Masters Thesis

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motion within a semiconductor crystal. For a long channel device, low field mobility serves as the
Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

Creator:

Or, Pee-Keong

Abstract:

The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...

Resource Type:

Masters Thesis

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]. The inherent high electron mobility makes GaAs Metal Semiconductor Field Effect Transistors (MESFETs
Analysis and modeling of electrically long MESFETS and coupled schottky lines

Creator:

Mohammed, Ahmed Sarhan

Abstract:

The properties of linear active coupled lines consisting of electrically long GaAs MESFET structures are investigated for possible applications as traveling-wave broad-band amplifiers. In addition, the nonlinear coupled Schottky lines are studied for applications as voltage tunable circuit elements. The analysis of the general active asymmetric coupled transmission lines in...

Resource Type:

Dissertation

Full Text:

Metal-Oxide-Semiconductor Field-Effect Transistor. cr Characteristic doping density. ND Carrier (donor

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Academic Affiliation

Electrical and Computer Engineering4

Advisor

Allstot, David J.2
Owen, S.J.T.1
Tripathi, Vijai K.1

Commencement Year

Commencement Year range begin – Commencement Year range end

Current results range from 1985 to 1988

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Committee Member

Alexander, Gerald C.1
Amort, Donald L.1
Cook, Curtis R.1
Goodnick, Stephen M.1
Owen, Sydney John T.1
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Creator

Lam, Steven C. F.1
Mohammed, Ahmed Sarhan1
Or, Pee Keong1
Prasad, S. Jayasimha1

Date

Date range begin – Date range end

Current results range from 1985 to 1988

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Decade

1980-1989[remove]4

Degree Field

Electrical and Computer Engineering[remove]4

Degree Level

Doctoral2
Master's2

Degree Name

Doctor of Philosophy (Ph.D.)2
Master of Science (M.S.)2

Language

English [eng]4

Non-Academic Affiliation

Oregon State University. Graduate School4

Peer Reviewed

No4

Resource Type

Dissertation2
Masters Thesis2

Rights Statement

Copyright Not Evaluated4

Subject

Metal semiconductor field-effect transistors3
Amplifiers, Traveling-wave1
Electric filters, Resistance-capacitance1
Gallium arsenide semiconductors1
Indium phosphide1
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