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Filtering by: Creator Chen, Kuei-Lin Decade 1980-1989 Subject Gallium arsenide semiconductors

Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions

Creator:

Orwa, Julius O.

Resource Type:

Masters Thesis
Modeling and characterization of hemt devices

Creator:

Chang, Chujyh

Abstract:

Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...

Resource Type:

Masters Thesis
Growth, fabrication and modeling of pseudomorphic laser diodes

Creator:

Ebner, John

Abstract:

This thesis reports on the crystal growth, fabrication, modeling and performance of Graded Index-Separate Confinement Heterostructure laser diodes which contain pseudomorphic InGaAs as the active region material. Laser epitaxial layers were grown with different indium mole-fractions, and a constant InGaAs layer thickness of 10 nm, on both sides of the...

Resource Type:

Dissertation