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Filtering by: Decade 1980-1989 Subject Semiconductors -- Defects

An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy

Creator:

Godbole, Hemendra G.

Abstract:

Imperfections in semiconductor materials constitute a rich area for research. The importance of the characterization of these imperfections cannot be understated. Junction spectroscopic techniques provide a unique tool for the study of these imperfections. The test specimens could consist of Schottky barrier, p-n junctions, or MOS structures. Using Schottky barrier...

Resource Type:

Masters Thesis