Index Catalog // ScholarsArchive@OSU

Start Over

Filtering by: Decade 1980-1989 Subject Semiconductors -- Impurity distribution

Recombination and generation lifetime characterization of p/p⁺ epitaxial silicon wafers

Creator:

Aminzadeh, Mehran G.

Abstract:

The refresh times of all dynamic charge storage devices, best characterized by the generation lifetime at roan temperature and the recombination lifetime at higher device operating temperatures (T>70°C), strongly influence the efficient and successful operation of dynamic charge storage devices such as DRAM's and CCD's. Both recombination and generation lifetime...

Resource Type:

Dissertation