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Filtering by: Alternative title ssim Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Remove constraint Alternative title ssim: Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Decade 1980-1989 Remove constraint Decade: 1980-1989

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  • Diamond-like carbon films for electroluminescent applications

    Creator:
    Kim, Seung-bae
    Abstract:
    White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. Electroluminescence was observed by the application of ac voltages in excess of 200 V to a metal-insulator- semiconductor (i.e. DLC)-insulator-metal (MISIM) device structure. For EL applications, three types of the DLC films were...
    Resource Type:
    Masters Thesis
    Full Text:
    (defined in section 3.3) was deposited on the bottom insulator as an active layer. The deposition

  • Improved stability in ACTFEL devices

    Creator:
    Khormaei, Iranpour
    Abstract:
    The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
    Resource Type:
    Masters Thesis
    Full Text:
    cas layer was deposited in a different chamber from the insulators and ZnS. For example, for a S-CS