The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...
The characteristic of the subthreshold current in a
GaAs MESFET exhibits a negative exponential function with
Vgs. After studying the behavior of this current in this
region over a range of temperature and drain bias voltages,
a subthreshold current model was developed. The model was
implemented in a circuit simulation...
The properties of linear active coupled lines consisting of
electrically long GaAs MESFET structures are investigated for possible
applications as traveling-wave broad-band amplifiers. In addition,
the nonlinear coupled Schottky lines are studied for applications as
voltage tunable circuit elements.
The analysis of the general active asymmetric coupled transmission
lines in...