The bandgap voltage reference technique, as implemented in Silicon technology, has evolved to a state of advanced development and become the method of choice for temperature independent voltage biasing in integrated circuits. The heterojunction bipolar transistor (HBT), fabricated from epitaxial A1GaAs /GaAs, is developing to a point where basic circuit...
The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...
The characteristic of the subthreshold current in a
GaAs MESFET exhibits a negative exponential function with
Vgs. After studying the behavior of this current in this
region over a range of temperature and drain bias voltages,
a subthreshold current model was developed. The model was
implemented in a circuit simulation...
Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and
AIGaAs /InGaAs High Electron Mobility Transistors were electrically
characterized in order to compare the room temperature DC device
performance with one-dimensional device models. Model parameters
such as the channel mobility and source/drain series resistances are
extracted from independent measurement of...
The properties of linear active coupled lines consisting of
electrically long GaAs MESFET structures are investigated for possible
applications as traveling-wave broad-band amplifiers. In addition,
the nonlinear coupled Schottky lines are studied for applications as
voltage tunable circuit elements.
The analysis of the general active asymmetric coupled transmission
lines in...