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Filtering by: Decade 1990-1999 Remove constraint Decade: 1990-1999 Degree Level Doctoral Remove constraint Degree Level: Doctoral Subject Gallium arsenide semiconductors Remove constraint Subject: Gallium arsenide semiconductors

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Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

Creator:

Schulte, Donald W.

Resource Type:

Dissertation
NMR study of GaAs at high temperature

Creator:

Han, Weimin, 1960-

Resource Type:

Dissertation
A P-well GaAs MESFET technology

Creator:

Canfield, Philip C.

Abstract:

The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...

Resource Type:

Dissertation
Electrical characterization of n-type aluminum gallium arsenide

Creator:

Kim, Seung-bae

Resource Type:

Dissertation
Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors

Creator:

Kollipara, Ravindranath Tagore

Abstract:

High speed photodetectors are a necessary element in broad band digital and analog optical communication systems. In this thesis easily integrable planar high speed photodetectors made on undoped semi-insulating (SI) GaAs substrates are modeled and tested. The fabrication process of the detectors is fully compatible with GaAs metal-semiconductor field effect...

Resource Type:

Dissertation
Analysis and modeling of GaAs MESFET's for linear integrated circuit design

Creator:

Lee, Mankoo

Abstract:

A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...

Resource Type:

Dissertation
GaAs(100) surface chemistry : interactions with molecular chlorine and sulfur compounds

Creator:

Mokler, Scott M.

Abstract:

An important aspect in device technology is the processing of GaAs to produce highly-resolved etch patterns on the substrate. This is done typically on the GaAs(100) surface. Recently, a number of methods, all using chlorinated vapor reactants, have been applied to fabrication of GaAs devices. In spite of these technological...

Resource Type:

Dissertation

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Academic Affiliation

Electrical and Computer Engineering5
Chemistry1
Physics1

Advisor

Allstot, David J.1
Arthur, John R.1
Forbes, Leonard1
Gardner, John A.1
Plant, Thomas K.1
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Commencement Year

Commencement Year range begin – Commencement Year range end

Current results range from 1990 to 1996

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Committee Member

Arthur, J. A.1
Arthur, John R.1
Bushnell, Dwight1
Goodnick, Stephen M.1
Koyama, Rich1
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Creator

Canfield, Philip C.1
Han, Weimin, 1960 1
Kim, Seung Bae1
Kollipara, Ravindranath Tagore1
Lee, Mankoo1
more Creators »

Date

Date range begin – Date range end

Current results range from 1990 to 1995

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Decade

1990-1999[remove]7

Degree Field

Electrical and Computer Engineering5
Chemistry1
Physics1

Degree Level

Doctoral[remove]7

Degree Name

Doctor of Philosophy (Ph.D.)7

Language

English [eng]7

Non-Academic Affiliation

Oregon State University. Graduate School7

Peer Reviewed

No7

Resource Type

Dissertation7

Rights Statement

Copyright Not Evaluated7

Subject

Gallium arsenide semiconductors[remove]7
Metal semiconductor field-effect transistors3
Detectors -- Design and construction1
Doped semiconductors1
Epitaxy1
more Subjects »

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