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Filtering by: Subject Metal semiconductor field-effect transistors -- Noise Remove constraint Subject: Metal semiconductor field-effect transistors -- Noise Decade 1990-1999 Remove constraint Decade: 1990-1999 Non-Academic Affiliation Oregon State University. Graduate School Remove constraint Non-Academic Affiliation: Oregon State University. Graduate School

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  • Noise measurements, models and analysis in GaAs MESFETs circuit design

    Creator:
    Yan, Kai-tuan Kelvin
    Resource Type:
    Dissertation
    Full Text:
    semiconductor and the oxide [8]. Explanations of the origin of 1/f noise in GaAs devices are varied and this

  • CMOS low noise amplifier design utilizing monolithic transformers

    Creator:
    Zhou, Jianjun J.
    Abstract:
    Full integration of CMOS low noise amplifiers (LNA) presents a challenge for low cost CMOS receiver systems. A critical problem faced in the design of an RF CMOS LNA is the inaccurate high-frequency noise model of the MOSFET implemented in circuit simulators such as SPICE. Silicon-based monolithic inductors are another...
    Resource Type:
    Dissertation
    Full Text:
    of the induced gate current noise in MOS transistor. 20 2.3 Small-signal noise circuit of a MOS

  • Characterization of oxygen and carbon effects in silicon material and MOSFET devices

    Creator:
    Haddad, Homayoon
    Resource Type:
    Dissertation
    Full Text:
    submicron Metal-Oxide-Semiconductor Field Effect Transistor development. As the complexity of new

  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    OF P-CHANNEL GaAs MESFET 1. INTRODUCTION The metal-semiconductor field-effect transistor (MESFET

  • Analysis and modeling of GaAs MESFET's for linear integrated circuit design

    Creator:
    Lee, Mankoo
    Abstract:
    A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
    Resource Type:
    Dissertation
    Full Text:
    ofessor Forbes A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET

  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation
    Full Text:
    -semiconductor field effect transistor (MESFET) technology by deviations of the semi- insulating substrate

  • Hot electron effects in N-channel MOSFET's

    Creator:
    Or, Siu-shun Burnette
    Abstract:
    The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
    Resource Type:
    Masters Thesis
    Full Text:
    the lightly doped drain-source (LDD) insulated gate field-effect transistor," IEEE Tran. Electron

  • Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

    Creator:
    Aminzadeh, Payman G.
    Abstract:
    Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
    Resource Type:
    Masters Thesis
    Full Text:
    -semiconductor field-effect transistors (MOSFETs) are the dominant devices used in today's semiconductor

  • MOSFET-only predictive track and hold circuit

    Creator:
    Qiu, Xiangping
    Abstract:
    High-accuracy and high-speed CMOS track-and-hold (T/H) or sample-and-hold (S/H) circuits are an important part of the analog-to-digital interface. The switched-capacitor (SC) circuits usually contain one or more op-amps whose dc offset, finite gain, finite bandwidth have a big impact on the accuracy of the track-and-hold circuit. Basic correlated double sampling...
    Resource Type:
    Masters Thesis
    Full Text:
    slew rate 32 4.2.4 The effect of finite output resistance 33 4.3 Noise 35 4.3.1 Thermal noise

  • Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors

    Creator:
    Kollipara, Ravindranath Tagore
    Abstract:
    High speed photodetectors are a necessary element in broad band digital and analog optical communication systems. In this thesis easily integrable planar high speed photodetectors made on undoped semi-insulating (SI) GaAs substrates are modeled and tested. The fabrication process of the detectors is fully compatible with GaAs metal-semiconductor field effect...
    Resource Type:
    Dissertation
    Full Text:
    process of the detectors is fully compatible with GaAs metal-semiconductor field effect transistor