Index Catalog // ScholarsArchive@OSU

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: Privacy Abstract approved: John F. WaXer Solar cells with energy bandgaps engineered for the optimal

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: to my advisor, Professor John F. Wager, for the support, guidance and encouragement he has given me

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: , Professor John F. Wager, for the support, guidance, and encouragement he has given me throughout this work

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: I would like to thank my advisor, Professor John F. Wager, for his advice, patience, and

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation
Full Text:: Inhomogeneous Dielectrics Abstract approved: Dr. John F. Wager In this thesis the concept of inhomogeneous

Alternating-current thin-film electroluminescent device physics and modeling

Creator:: Douglas, Allan A.
Abstract:: Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
Resource Type:: Masters Thesis
Full Text:: : Dr. John F. W e r Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the

Phosphor development for alternating-current thin-film electroluminescent applications

Creator:: Nguyen, Tin T.
Resource Type:: Masters Thesis
Full Text:: sincere appreciation to Dr. John F. Wager for his guidance, encouragement, and patience during my

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: Degradation Of Sub-Micron n-channel MOSFETs Subiect to Static Stress. Abstract approved: Dr. John F. Wager

ACTFEL phosphor deposition by RF sputtering

Creator:: Ang, Wie Ming
Resource Type:: Masters Thesis
Full Text:: Privacy Abstract approved: Dr. John F. W ger In this thesis, a research program with the goal of

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Creator:: Mueller, Matthew R.
Resource Type:: Masters Thesis
Full Text:: Phosphor. Abstract approved: Dr. John F. Wager The goal of this thesis is to evaluate Al InN as an

ScholarsArchive@OSU

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Electrical characterization of n-type aluminum gallium arsenide

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Design, fabrication, and testing of inhomogeneous dielectrics

Alternating-current thin-film electroluminescent device physics and modeling

Phosphor development for alternating-current thin-film electroluminescent applications

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

ACTFEL phosphor deposition by RF sputtering

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

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