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Filtering by: Subject Semiconductor doping Decade 2010-2019

Fracture toughness of void-site-filled skutterudites

Creator:

Eilertsen, James S.

Abstract:

Thermoelectric materials are playing an increasingly significant role in the global effort to develop sustainable energy technologies. Consequently, the demand for materials with greater thermoelectric efficiency has stimulated the development of state-of-the-art interstitially doped skutterudite-based materials. However, since intermetallics are often embrittled by interstitial substitution, optimal skutterudite-based device design, manufacture,...

Resource Type:

Masters Thesis

Full Text:

interstitial doping. Both pure and interstitially doped cobalt antimonide skutterudites were synthesized
Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

Creator:

Lin, Shijia

Abstract:

Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...

Resource Type:

Masters Thesis

Full Text:

using atomic layer deposition (ALD). Due to potential nucleation delays, doping and formation of