We computed band gaps of amorphous oxides within the In-Ga-Zn triad. These included ZnO, Ga2O3, In2O3, Ga2ZnO4, Ga2Zn8O11, In2ZnO4, InGaZnO4, and InGaO3. Comparing the computed band gap to experimental measurements, the results were promising with a mean unsigned error of 0.28 eV and an unsigned standard deviation of 0.28 eV....