Index Catalog // ScholarsArchive@OSU

Electrical and optical properties of semi-insulating and ion-implanted GaAs and InP

Creator:: Rhee, Jin Koo
Abstract:: The electrical and optical properties of semi-insulating, epitaxial and ion-implanted GaAs and InP have been characterized and analyzed. Electron and hole traps in semi-insulating GaAs and InP, with activation energies ΔE[subscript T] ranging from 0.16 ± 0.01 to 0.98 ± 0.01 eV, have been detected and characterized by Photo-Induced Current...
Resource Type:: Dissertation
Full Text:: be expressed by (8,33) 14 i(t) = K{e n (t) + e [N n (t)]1 (2-9) n T p T T where the constant K

Defects and transport properties in In(1-x)Ga(x)As(y)P(1-y) and Ga(1-x)Al(x)As

Creator:: Ku, Joseph W.
Resource Type:: Dissertation
Full Text:: analyses of the mobility and concentration data for T > 350°K. The electrical properties of

Analysis and modeling of electrically long MESFETS and coupled schottky lines

Creator:: Mohammed, Ahmed Sarhan
Abstract:: The properties of linear active coupled lines consisting of electrically long GaAs MESFET structures are investigated for possible applications as traveling-wave broad-band amplifiers. In addition, the nonlinear coupled Schottky lines are studied for applications as voltage tunable circuit elements. The analysis of the general active asymmetric coupled transmission lines in...
Resource Type:: Dissertation
Full Text:: . Alexander, Mr. Donald L. Amort, Dr. Sydney John T. Owen, Dr. Thomas K. Plant and Dr. Alan H. Robinson for

Analysis and applications of multiple coupled line structures in an inhomogeneous medium

Creator:: Chin, Youn Kang
Abstract:: The general expressions for finding the network functions, e.g., the immittance and the scattering parameters, of a general, uniformly coupled n-line structure in an inhomogeneous medium are derived in terms of the normal mode parameters of the system. These are used to compute or to derive the explicit expressions for...
Resource Type:: Dissertation
Full Text:: . Vijai K. pat The general expressions for finding the network functions, e.g., the immittance and the

Global Hierarchical Control of a Park of Spar Buoy-type Floating Oscillating Water Column Wave Energy Converters

Creator:: Gaebele, Daniel T.
Abstract:: Converting energy from ocean waves is a challenging area for control theory application because of the nonlinear dynamics in various time scales. Generally, wave energy converter (WEC) control is applied in order to maximize power absorption, in the most common wave conditions, and subject to the devices’ physical constraints. Commonly,...
Resource Type:: Dissertation
Full Text:: ° excitation force coefficient phase vector A∞ kg added mass coefficient at infinite frequency K(t) kg/s2

Field theoretic analysis of a class of planar microwave and opto-electronic structures

Creator:: Hahm, Yeon-Chang
Abstract:: With increasing operating frequencies in CMOS RF/microwave integrated circuits, the performance of on-chip interconnects is becoming significantly affected by the lossy substrate. It is the purpose of the first part of this thesis to develop a rigorous field theoretic analysis approach for efficient characterization of single and multiple coupled interconnects...
Resource Type:: Dissertation
Full Text:: Analysis of a Class of Planar Microwave and Opto-Electronic Structures. Abstract approved: Vijai K

High-accuracy circuits for on-chip capacitor ratio testing and sensor readout

Creator:: Wang, Bo, 1970-
Abstract:: The precise measurement of a capacitance difference or ratio in a digital form is very important for capacitive sensors, for CMOS process characterization as well as for the realization of precise switched-capacitor data converters, amplifiers and other circuits utilizing ratioed capacitors. This thesis introduces design techniques for on-chip capacitor ratio...
Resource Type:: Dissertation
Full Text:: . Prof. Thomas. K. Plant and Prof. John T. Stonick for valuable comments and help. Thanks to Rita Wells

Characterization and electrical circuit modeling of interconnections and packages using time domain network analysis

Creator:: Hayden, Leonard
Abstract:: The improved accuracy of Time Domain Reflection and Transmission (TDR/T) measurements made possible by the calibration process known as Time Domain Network Analysis (TDNA) is applied to the problem of characterization and modeling of electronic interconnect and packaging structures. TDNA uses measurements of known and partially known calibration standards to...
Resource Type:: Dissertation
Full Text:: Time Domain Network Analysis Abstract approved: Vijai K. Tripathi The improved accuracy of Time

Injection of electrons into silicon dioxide from planar silicon substrates

Creator:: Rode, Ajit G.
Resource Type:: Dissertation
Full Text:: ]. Due to its high coupling coefficient for compressional waves (K t = 0.28) it is widely used in

Electrical properties of GaAs FET structures

Creator:: Yang, Fanling Hsu
Abstract:: The electrical properties of ion-implanted GaAs FET channels are investigated by two methods. First, the channel current (I) as a function of voltage (V) is examined at different temperatures and using different voltage ramp rates. The standard FET I-V curve, which can be observed on a commercial curve tracer, is...
Resource Type:: Dissertation
Full Text:: approved: Redacted for privacy T. K. Plant The electrical properties of ion-implanted GaAs FET channels

ScholarsArchive@OSU

Electrical and optical properties of semi-insulating and ion-implanted GaAs and InP

Defects and transport properties in In(1-x)Ga(x)As(y)P(1-y) and Ga(1-x)Al(x)As

Analysis and modeling of electrically long MESFETS and coupled schottky lines

Analysis and applications of multiple coupled line structures in an inhomogeneous medium

Global Hierarchical Control of a Park of Spar Buoy-type Floating Oscillating Water Column Wave Energy Converters

Field theoretic analysis of a class of planar microwave and opto-electronic structures

High-accuracy circuits for on-chip capacitor ratio testing and sensor readout

Characterization and electrical circuit modeling of interconnections and packages using time domain network analysis

Injection of electrons into silicon dioxide from planar silicon substrates

Electrical properties of GaAs FET structures

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