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Filtering by: Creator Holman, W. F. Remove constraint Creator: Holman, W. F. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering Degree Name Doctor of Philosophy (Ph.D.) Remove constraint Degree Name: Doctor of Philosophy (Ph.D.)

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  • 1/f noise of GaAs resistors on semi-insulating substrates, and 1/f noise due to temperature fluctuations in heat conduction

    Creator:
    Choi, Mun-Seork
    Abstract:
    This research work focuses on the mechanism of 1/f noise in GaAs resistors on semi-insulating substrates and 1/f noise due to temperature fluctuations in heat conduction in resistors, diodes, and bipolar transistors. The goal of this research is to generate accurate models to explain physical origin of 1/f noise in...
    Resource Type:
    Dissertation
    Full Text:
    other devices. L. Forbes, M.S. Choi and W. Cao, “1/f NOISE IN BIPOLAR TRANSISTORS DUE TO

  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
    Resource Type:
    Dissertation
    Full Text:
    . Abstract approved: John F. Wager Due to a lack of grain boundaries, an amorphous metal thin film (AMTF

  • Hybrid computer simulation of wind-driven ocean currents

    Creator:
    Vithayathil, Francis Joseph
    Abstract:
    A simulation method using a hybrid computer is developed in this dissertation to enhance the study of wind-driven ocean circulation. The simulation is based on the mathematical model developed by Ekman. Pure digital simulation is not economical due to excessive computer time required for the solution of the partial differential...
    Resource Type:
    Dissertation
    Full Text:
    thankful to the members of his doctoral committee, Professors J. F. Engle, J. R. Welty, W. M. Stone, R. B

  • Investigation of metal-insulator-metal (MIM) and nanolaminate barrier MIIM tunnel devices fabricated via atomic layer deposition

    Creator:
    Alimardani, Nasir
    Abstract:
    Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
    Resource Type:
    Dissertation
    Full Text:
    . 6 References 1 N. Alimardani, E. W. Cowell III, J. F. Wager, J. F. Conley, Jr., D. R. Evans, M

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
    Full Text:
    Transistors Abstract approved: ______________________________________________________ John F

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    : _____________________________________________________ John F. Wager Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
    Full Text:
    : Atomic Solid State Energy Scale Applied to Novel Thin-Film Solar Absorbers Abstract approved: John F

  • Electrical characterization of n-type aluminum gallium arsenide

    Creator:
    Kim, Seung-bae
    Resource Type:
    Dissertation
    Full Text:
    dislocation networks due to glide after processing with an optical power density of approximately 9 x 104 W

  • Hybrid, high speed fault detection based on instantaneous line voltages

    Creator:
    Ramchandani, Hiranand Balchand
    Abstract:
    This fault detection scheme is based on sampling the instantaneous phase voltages and checking their sum and magnitude against a specified voltage. Faults on the system cause unbalances and distortion of the phase voltages and currents. The currents and voltages change in magnitude and/or phase position with respect to the...
    Resource Type:
    Dissertation
    Full Text:
    John F. Eyeae This fault detection scheme is based on sampling the instan- taneous phase voltages and

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    : John F. Wager The aim of this dissertation is to develop oxide semiconductors by radio-frequency