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Filtering by: Alternative title ssim Technical note no. F-5 Remove constraint Alternative title ssim: Technical note no. F-5 Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering Degree Name Doctor of Philosophy (Ph.D.) Remove constraint Degree Name: Doctor of Philosophy (Ph.D.)

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  • Renewable Energy in the Pacific Northwest - Technical and Economic Analysis of 100% Renewable Portfolios, including Seasonality Impacts and Potential Applications of Energy Storage

    Creator:
    Harpool, Scott
    Abstract:
    Renewable electrical energy sources are relatively easy to integrate at moderate penetrations, utilizing a combination of technical and market methods to increase grid flexibility. However, integrating high renewable portfolios is more challenging, and the optimal combination of resources will vary depending on the features of specific geographic areas. This study...
    Resource Type:
    Dissertation
    Full Text:
    August 27, 2018. Title: Renewable Energy in the Pacific Northwest - Technical and Economic Analysis

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
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    Transistors Abstract approved: ______________________________________________________ John F

  • 1/f noise of GaAs resistors on semi-insulating substrates, and 1/f noise due to temperature fluctuations in heat conduction

    Creator:
    Choi, Mun-Seork
    Abstract:
    This research work focuses on the mechanism of 1/f noise in GaAs resistors on semi-insulating substrates and 1/f noise due to temperature fluctuations in heat conduction in resistors, diodes, and bipolar transistors. The goal of this research is to generate accurate models to explain physical origin of 1/f noise in...
    Resource Type:
    Dissertation
    Full Text:
    Experimental Results…………………..…..…54 4.6. Discussions ………………………………………………..…........55 5. 1/f NOISE DUE TO

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    : John F. Wager The aim of this dissertation is to develop oxide semiconductors by radio-frequency

  • Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors

    Creator:
    Austin, Dustin Z.
    Abstract:
    Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have become a core passive component in modern integrated circuits. International Technology Roadmap for Semiconductors (ITRS) projections for scaling of analog/mixed-signal MIMCAP applications require simultaneously increasing capacitance density while maintaining low leakage current density and low voltage nonlinearity (characterized by the quadratic...
    Resource Type:
    Dissertation
    Full Text:
    John F. Conley Jr. Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have

  • An n-sheet, state-space ACTFEL device model

    Creator:
    Hitt, John C.
    Abstract:
    The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent...
    Resource Type:
    Dissertation
    Full Text:
    E and F is termed leakage charge. Note also from Fig. 2.3 the standard rise time of 5 s, pulse

  • Novel ACTFEL phosphor development

    Creator:
    Ang, Wie Ming
    Abstract:
    The goal of this thesis is to identify and to explore novel ACTFEL phosphor materials. Several important materials properties relevant to ACTFEL phosphor development are identified. All of these properties cannot be obtained simultaneously. Therefore, several key phosphor materials properties are identified as critical to the development of an ACTFEL...
    Resource Type:
    Dissertation
    Full Text:
    Redacted for Privacy Redacted for Privacy Redacted for Privacy ACKNOWLEDGEMENT Thanks to Prof. John F

  • Manufacture and characterization of novel ACTFEL materials and devices

    Creator:
    Bender, Jeffrey P.
    Abstract:
    The aim of this dissertation is to develop non-traditional approaches to alternating-current thin-film electroluminescent (ACTFEL) device fabrication. ACTFEL technology suffers from a lack of adequately bright and efficient primary-color phosphors and cannot presently compete in the low-cost display market. Therefore the research presented in this dissertation focuses on an exploration...
    Resource Type:
    Dissertation
    Full Text:
    : Manufacture and Characterization of Abstract approved. John F/Wager The aim of this dissertation is to

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    G aZ nO 4 3. 5 80 -9 0 0. 2 24 ∼ 10 20 2x 10 −3 [4 4, 45 ,4 6] Sn O 2 3. 6 4. 5 80 -9

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    n-type substrate and a dopant density of ! 4 "10 15 cm-3. Note that there is no weak