Index Catalog // ScholarsArchive@OSU

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Creator:: Prasad, S. Jayasimha
Resource Type:: Dissertation
Full Text:: f4(E) fermi function for electron traps in the oxide f p(E) fermi function for hole traps in the

Injection of electrons into silicon dioxide from planar silicon substrates

Creator:: Rode, Ajit G.
Resource Type:: Dissertation
Full Text:: Ajit Rode. ACKNOWLEDGEMENTS The author wishes to express his gratitude to Professor S.J.T. Owen

A dynamic model of exchange rate in relation to international trading

Creator:: Sun, Keong-wah Gary
Abstract:: It is popular belief that the volatility of the exchange rate is due to the balance of payments, which in turn is mainly influenced by the balance of trade. A closed-loop dynamic economic model is proposed to describe and analyse the effect of the international trade of a country on...
Resource Type:: Dissertation
Full Text:: INTERNATIONAL TRADING Abstract Approved: Redacted for Privacy Owen D. Osborne It is popular belief that the

Electrical and optical properties of semi-insulating and ion-implanted GaAs and InP

Creator:: Rhee, Jin Koo
Abstract:: The electrical and optical properties of semi-insulating, epitaxial and ion-implanted GaAs and InP have been characterized and analyzed. Electron and hole traps in semi-insulating GaAs and InP, with activation energies ΔE[subscript T] ranging from 0.16 ± 0.01 to 0.98 ± 0.01 eV, have been detected and characterized by Photo-Induced Current...
Resource Type:: Dissertation
Full Text:: _Dr. Bhattacharya Redacted for privacy / Dr. S.J.f. Owen The electrical and optical properties of

Defects and transport properties in In(1-x)Ga(x)As(y)P(1-y) and Ga(1-x)Al(x)As

Creator:: Ku, Joseph W.
Resource Type:: Dissertation
Full Text:: -d fois ATIM-67r1 Dr.STJ.T. Owen The electrical and optical properties of the III-V semiconductor

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: . J. T. Owen, Professor J. A. Arthur, and Professor J. R. Welty for being on my graduate committee

Design of CMOS switched-current filters

Creator:: Fiez, Theresa S.
Abstract:: The design and implementation of Switched-Current (SI) ladder filters is described. SI filters require only a standard digital CMOS process and the power supply voltage requirement is low. SI circuits also can be potentially operated at higher frequencies than Switched-Capacitor (SC) filters due to the low-impedance wideband nodes of the...
Resource Type:: Dissertation
Full Text:: committee for their time and effort: Dr. John Owen, Dr. Rudy Engelbrecht, Dr. Vijai Tripathi, and Dr

Analysis and applications of multiple coupled line structures in an inhomogeneous medium

Creator:: Chin, Youn Kang
Abstract:: The general expressions for finding the network functions, e.g., the immittance and the scattering parameters, of a general, uniformly coupled n-line structure in an inhomogeneous medium are derived in terms of the normal mode parameters of the system. These are used to compute or to derive the explicit expressions for...
Resource Type:: Dissertation
Full Text:: this research. The author also expresses thanks to Professors S. John T. Owen, Rudolf Engelbrecht

Atomic solid state energy scale applied to novel thin-film solar absorbers

Creator:: Pelatt, Brian D.
Abstract:: The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
Resource Type:: Dissertation
Full Text:: AN ABSTRACT OF THE DISSERTATION OF Brian D. Pelatt for the

Analysis and modeling of electrically long MESFETS and coupled schottky lines

Creator:: Mohammed, Ahmed Sarhan
Abstract:: The properties of linear active coupled lines consisting of electrically long GaAs MESFET structures are investigated for possible applications as traveling-wave broad-band amplifiers. In addition, the nonlinear coupled Schottky lines are studied for applications as voltage tunable circuit elements. The analysis of the general active asymmetric coupled transmission lines in...
Resource Type:: Dissertation
Full Text:: . Alexander, Mr. Donald L. Amort, Dr. Sydney John T. Owen, Dr. Thomas K. Plant and Dr. Alan H. Robinson for

ScholarsArchive@OSU

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Injection of electrons into silicon dioxide from planar silicon substrates

A dynamic model of exchange rate in relation to international trading

Electrical and optical properties of semi-insulating and ion-implanted GaAs and InP

Defects and transport properties in In(1-x)Ga(x)As(y)P(1-y) and Ga(1-x)Al(x)As

Electrical characterization of n-type aluminum gallium arsenide

Design of CMOS switched-current filters

Analysis and applications of multiple coupled line structures in an inhomogeneous medium

Atomic solid state energy scale applied to novel thin-film solar absorbers

Analysis and modeling of electrically long MESFETS and coupled schottky lines

Limit your search

Academic Affiliation

Advisor

Commencement Year

Committee Member

Creator

Date

Decade

Degree Field

Degree Level

Degree Name

File Format

Language

License

Non-Academic Affiliation

Peer Reviewed

Resource Type

Rights Statement

Subject

Search Constraints

Search Results

Limit your search