The transition from second-generation (2G) to third-generation (3G) wireless cellular and cordless telephone systems requires multi-standard adaptability in a single RF receiver equipment. An important answer to this request is the use of Delta-Sigma modulators for IF-to-baseband conversion, which will satisfy the dynamic range requirements for digital signal processing, and...
This work is concerned with the modeling and analysis of lossy planar dielectric
optical waveguides. Loss mechanisms which affect propagation characteristics are
reviewed, and various representations of the propagation constant in the lossy case
are defined. Waveguide structures which are susceptable to absorption and/or to
leakage loss, in particular silicon-based...
Microfluidic devices have enabled lab-on-a-chip (LOC) systems that allow for complex sample analysis and preparation in a compact form factor. One technology that may benefit from a microfluidic approach and further miniaturization is flow cytometry. Flow cytometry is an analysis technique for enumerating and characterizing populations of cells; this is...
As interest grows in developing devices to harvest energy from ocean waves, tidal currents, and offshore wind, concerns over possible environmental effects from such devices also grow. One such concern is over the induced electric fields and the generated magnetic fields from generators and their associated submarine power cables in...
The objective of this thesis is to introduce and demonstrate a novel magnetic bead detector based on inductive detection at the ferromagnetic resonance (FMR) frequency for use in bio-sensing applications. Detection ability is demonstrated through theoretical arguments, numerical computer simulations, and experimental characterization of micro-fabricated detectors.
The detector is composed...
This thesis describes the transport properties observed in thermally treated graphite oxide (GO), which holds promise as an economical route to obtaining graphene. Graphene is a material consisting of a single atomic plane of carbon atoms and was first isolated as recently as 2004. Several isolation techniques have been investigated,...
The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...