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Filtering by: Creator Taylor, Kendrick C. Degree Field Electrical and Computer Engineering Subject Metal semiconductor field-effect transistors

A P-well GaAs MESFET technology

Creator:

Canfield, Philip C.

Abstract:

The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...

Resource Type:

Dissertation

Full Text:

THESIS OF Philip C. Canfield for the degree of Doctor of Philosophy in Electrical and Computer
A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Creator:

Prasad, S. Jayasimha

Resource Type:

Dissertation

Full Text:

, characterized by 1 MHz C-V plots, exhibited a positive shift (AV) in the C-V curve when a positive gate voltage
Wide bandwidth GaAs MESFET amplifier

Creator:

Yan, Kai-tuan Kelvin

Resource Type:

Masters Thesis

Full Text:

contribution helped in the completion of this thesis. I would also like to thank Dr. Stewart S. Taylor of
Two dimensional numerical simulation of a non-isothermal GaAs MESFET

Creator:

Lin, Angela A.

Abstract:

The low thermal conductivity of gallium arsenide compared to silicon results in self-heating effects in GaAs MESFETs that limit the electrical performance of such devices for high power applications. To date, analytical thermal models of self heating in GaAs MESFETs are based on the assumption of a uniformly heated channel....

Resource Type:

Masters Thesis

Full Text:

is dominated by phonon scattering, and can be modeled empirically by Tk(T) -1.25 (Wirn e C) .r