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Filtering by: Creator Chen, Tsu-fang Degree Field Electrical and Computer Engineering Subject Modulation-doped field-effect transistors

Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

Creator:

Schulte, Donald W.

Resource Type:

Dissertation
Modeling and characterization of hemt devices

Creator:

Chang, Chujyh

Abstract:

Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...

Resource Type:

Masters Thesis

Full Text:

heterojunction.2 Later, In 1969, L. Esaki and R. Tsu suggested that the mobility of the two- dimensional
Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

Creator:

Schulte, Donald W.

Abstract:

This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...

Resource Type:

Masters Thesis