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Filtering by: Creator Eng%2C Kayleen S. Remove constraint Creator: Eng%2C Kayleen S. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • Analysis and design on low-power multi-Gb/s serial links

    Creator:
    Hu, Kangmin
    Abstract:
    High speed serial links are critical components for addressing the growing demand for I/O bandwidth in next-generation computing applications, such as many-core systems, backplane and optical data communications. Due to continued process scaling and circuit innovations, today's CMOS serial link transceivers can achieve tens of Gb/s per pin. However, most...
    Resource Type:
    Dissertation
    Full Text:
    Computer Engineering presented on June 8, 2011. Title: Analysis and Design on Low-Power Multi-Gb/s

  • Design techniques for low-power multi-GS/s analog-to-digital converters

    Creator:
    Jiang, Tao
    Abstract:
    Ultra-high-speed (>10GS/s), medium-resolution (5~6bit), low-power (<50mW) analog-to-digital converter can find it application in the areas of digital oscilloscopes and next-generation serial link receivers. There are several challenges to enable a successful design, however. First, the time-interleaved architecture is required in order to achieve over 10GS/s sampling rate, with the trade-off...
    Resource Type:
    Dissertation
    Full Text:
    Design Techniques for Low-Power Multi-GS/s Analog-to

  • Design of a 80/250-Msample/s FIR-filter for a pipelined ADC-FIR interface

    Creator:
    Stier, Hubert J.
    Resource Type:
    Masters Thesis
    Full Text:
    /250-Msample/s FIR-Filter for a Pipe lined ADC-FIR Interface. Abstract approved: Shih-Lien Lu With

  • A 400Mb/s 850nm FSO Link based on CMOS Integrated Receiver for Hybrid WiFi and Optical Femtocells

    Creator:
    Chen, Siyuan
    Abstract:
    The increasing demand for higher data-rates is challenging to satisfy with spectrum-deficient indoor WiFi networks. A novel hybrid WiFi Free-Space Optical (WIFO) system has been proposed to enhance the wireless capacity of indoor WiFi networks. In this thesis, an integrated optical wireless receiver is designed and integrated in 65-nm CMOS...
    Resource Type:
    Masters Thesis
    Full Text:
    /s 850nm FSO Link based on CMOS Integrated Receiver for Hybrid WiFi and Optical Femtocells Abstract

  • Fourier deep level transient spectroscopy and its application to gold in silicon

    Creator:
    Divekar, Prasad K.
    Abstract:
    A primarily software based Fourier Deep Level Transient Spectroscope (FDLTS) is built. The raw capacitance transient is acquired and digitized using capacitance meter HP4280A whereas the signal analysis is done using a customized software module. The software module calculates both the conventional DLTS spectrum and the Fourier DLTS spectrum. This...
    Resource Type:
    Masters Thesis
    Full Text:
    : Fourier Deep Level Transient Spectroscopy and Its Application to Gold in Silicon. Abstract approve S

  • Radiation effects in III-V heterojunction bipolar transistors

    Creator:
    Vuppala, Soujanya
    Abstract:
    Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The...
    Resource Type:
    Masters Thesis
    Full Text:
    : Radiation Effects in 111-V Heterojunction Bipolar Transistors Abstract approved: S. Subramanian Electron

  • Radiation effects in III-V compound semiconductor heterostructure devices

    Creator:
    Li, ChyiShiun
    Abstract:
    The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
    Resource Type:
    Masters Thesis
    Full Text:
    : Radiation Effects in 111-V Compound Semiconductor Heterostructure Devices. Abstract approved: S

  • Radiation effects in compound semiconductor heterostructure devices

    Creator:
    Sarkar, Aveek, 1974-
    Abstract:
    Radiation studies were performed on compound semiconductor heterostructure devices. The objective was to understand the degradation processes caused by the exposure of these devices to radiation. Preliminary experiments were focussed on studying the degradation phenomenon in single heterojunctions and single quantum wells. It was found that ionizing radiation like gamma...
    Resource Type:
    Masters Thesis
    Full Text:
    Heterostructure Devices Abstract approved. S. Subramanian Radiation studies were performed on compound

  • Design methodology for low-jitter phase-locked loops

    Creator:
    Bhagavatheeswaran, Shanthi, S.
    Abstract:
    This thesis presents a systematic top-down methodology for simulating a phase-locked loop using a macro model in Verilog-A. The macromodel has been used to evaluate the jitter due to supply noise, thermal noise, and ground bounce. The noise simulation with the behavioral model is roughly 310 times faster (best case)...
    Resource Type:
    Masters Thesis
    Full Text:
    ABSTRACT OF THE THESIS OF Shanthi S. Bhagavatheeswaran for the degree of Master of Science in Electrical

  • Design of sample and holds using CCDs in a standard CMOS process

    Creator:
    Ghatak, Kalyan Brata
    Abstract:
    The parasitic components of MOS switches at high speeds affect the linearity and resolution of CMOS sample and hold circuits. CCD-based circuit design can offer good performance at high speeds. This thesis presents the design of sample and hold circuits using charge-coupled device structures in a standard CMOS process. Three...
    Resource Type:
    Masters Thesis
    Full Text:
    S/Hs have been characterized using a continuous- time integrator and a zE ADC. The CCDs, with a