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Filtering by: Creator Gent, P. R. Remove constraint Creator: Gent, P. R. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • p-type transparent electronics

    Creator:
    Valencia, Melinda Marie
    Abstract:
    The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity,...
    Resource Type:
    Masters Thesis
    Full Text:
    , 2003. Title: p-Type Transparent Electronics. Abstract approved: John F. Wager The objective of this

  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    , the density of traps occupied by a hole, is dn-r dt = ( p cp + en ) ( NT nT ) ( n en + ep )nT (2-2-6

  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation
    Full Text:
    A P-well GaAs MESFET technology AN ABSTRACT OF THE

  • Recombination and generation lifetime characterization of p/p⁺ epitaxial silicon wafers

    Creator:
    Aminzadeh, Mehran G.
    Abstract:
    The refresh times of all dynamic charge storage devices, best characterized by the generation lifetime at roan temperature and the recombination lifetime at higher device operating temperatures (T>70°C), strongly influence the efficient and successful operation of dynamic charge storage devices such as DRAM's and CCD's. Both recombination and generation lifetime...
    Resource Type:
    Dissertation
    Full Text:
    treatments on T r 126 7. Suggestions+for improving T, in thin p/p epitaxial sili6on 129 VI CONCLUSIONS AND

  • Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

    Creator:
    Schulte, Donald W.
    Abstract:
    This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    Growth, fabrication and testing of pseudomorphic P

  • Modeling and development of p-type thin-film transistors

    Creator:
    Spiegelberg, Matthew Craig
    Abstract:
    The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
    Resource Type:
    Masters Thesis
    Full Text:
    of p-type thin-film transistors (p-TFTs), moving towards the realization of a fully transparent

  • Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

    Creator:
    Cheng, Mark
    Abstract:
    This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
    Resource Type:
    Masters Thesis
    Full Text:
    charge and interface traps," IEEE Electron Device Letters, vol. 14, no. 5, May 1993. [17] P. R. Gray and

  • SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

    Creator:
    Zhou, Junlin, 1973-
    Resource Type:
    Masters Thesis
    Full Text:
    I P1 1 r, - 1' I / '1 p I p? ( (_ A \ ,_,/L)t . , 3 , -s Ip ,r / -' s I., I

  • Dynamic modeling, simulation and stability analysis of brushless doubly-fed machines

    Creator:
    Li, Ruqi
    Abstract:
    A brushless doubly-fed machine (BDFM) is a single-frame, self-cascaded induction machine capable of operating in both the induction and the synchronous modes. This thesis presents some important advances concerning dynamic modeling, simulation and analysis of the BDFM. Initially, a two-axis model and its associated parameters are developed and calculated. The...
    Resource Type:
    Dissertation
    Full Text:
    greatly appreciated. I wish to thank Dr. D. Amort, Dr. R. Mohler and Dr. P. Cull for their serving on my

  • New hardware algorithms and designs for Montgomery modular inverse computation in Galois Fields GF(p) and GF(2 [superscript n])

    Creator:
    Gutub, Adnan Abdul-Aziz
    Abstract:
    The computation of the inverse of a number in finite fields, namely Galois Fields GF(p) or GF(2ⁿ), is one of the most complex arithmetic operations in cryptographic applications. In this work, we investigate the GF(p) inversion and present several phases in the design of efficient hardware implementations to compute the...
    Resource Type:
    Dissertation
    Full Text:
    , 2....... , p-2, p-i }. In this field, the basic arithmetic operations are: Addition: a+b= r, where