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Filtering by: Creator Hobbs, P. V. Remove constraint Creator: Hobbs, P. V. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • p-type transparent electronics

    Creator:
    Valencia, Melinda Marie
    Abstract:
    The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity,...
    Resource Type:
    Masters Thesis
    Full Text:
    , 2003. Title: p-Type Transparent Electronics. Abstract approved: John F. Wager The objective of this

  • Stretchable architectures for 3rd generation wireless networks

    Creator:
    Lakkavalli, Shashidhar V.
    Abstract:
    Power is a valuable resource. It is invaluable when for mobile devices. Mobile devices, due to their mobility cannot get a continuous source of power and derive their power from a battery contained in them. The main consumer of power in the mobile is its transmitter. With a limited power...
    Resource Type:
    Masters Thesis
    Full Text:
    AN ABSTRACT OF TIlE THESIS OF Shashidhar V. Lakkavalli for the

  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation
    Full Text:
    . INTRODUCTION V Page 1 2. EXPERIMENTAL 10 2.1 Conventional Technology 10 2.2 P-Well Technology 11 2.2.1

  • Recombination and generation lifetime characterization of p/p⁺ epitaxial silicon wafers

    Creator:
    Aminzadeh, Mehran G.
    Abstract:
    The refresh times of all dynamic charge storage devices, best characterized by the generation lifetime at roan temperature and the recombination lifetime at higher device operating temperatures (T>70°C), strongly influence the efficient and successful operation of dynamic charge storage devices such as DRAM's and CCD's. Both recombination and generation lifetime...
    Resource Type:
    Dissertation
    Full Text:
    'DUKE OF OM/DAVIS Continued V RESULTS AND DiscussiaN (II) 103 A. RECOMBINATION LIFETIME OF p/p t

  • Radiation effects in III-V compound semiconductor heterostructure devices

    Creator:
    Li, ChyiShiun
    Abstract:
    The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
    Resource Type:
    Masters Thesis
    Full Text:
    -irradiated sample at VCE=l.5 V........... 71 4.6 The forward Gummel plots before and after 1 x 1011 p/cm2

  • Radiation effects in III-V heterojunction bipolar transistors

    Creator:
    Vuppala, Soujanya
    Abstract:
    Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The...
    Resource Type:
    Masters Thesis
    Full Text:
    : Radiation Effects in 111-V Heterojunction Bipolar Transistors Abstract approved: S. Subramanian Electron

  • Time domain electromagnetic simulation of VLSI interconnects

    Creator:
    Falconer, Maynard C.
    Abstract:
    Current trends in integrated circuit technology are continuing towards physically smaller components and related structures. Interconnects between circuit components have reached sub-micron dimensions which can not be modeled accurately by the current ideal microstrip analysis based techniques. These techniques often assume that the structure being modeled is perfectly conducting, smooth,...
    Resource Type:
    Masters Thesis
    Full Text:
    cosech() Yo coth(V) (3) Zo coth(W) Zo cos Z matrix > (4) Zo cos ech(ye) Zo coth(ye) Where: y = a

  • Modeling and development of p-type thin-film transistors

    Creator:
    Spiegelberg, Matthew Craig
    Abstract:
    The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
    Resource Type:
    Masters Thesis
    Full Text:
    ............................ 74 5.7 (a) Transfer characteristics ofBaCuSF p-TTFT TR23. Vns= -2 V. On-to-off ratio = 1.98. (b

  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    20 Fig. 2-2-3 I-V curve of a p-channel GaAs MESFET. II and 12 are drain currents at drain biases V1

  • Action Selection for Heterologous Control of a Continuous-Output Myoelectric Prosthesis

    Creator:
    Sylwester, Sean T.
    Abstract:
    Significance: Movement intent decoding algorithms can interpret human bioelectrical signals to control prosthetic limbs with many degrees of freedom (DOFs). This work involves decoding volitional movement intent from surface electromyogram (sEMG) signals to control prosthetic arms. To train these algorithms, patients flex their muscles to “follow” a movement prompt, and...
    Resource Type:
    Masters Thesis
    Full Text:
    approved: V John Mathews Significance: Movement intent decoding algorithms can interpret human