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Filtering by: Creator Hong, Soon Koo Remove constraint Creator: Hong, Soon Koo Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

    Creator:
    Triska, Joshua B.
    Abstract:
    Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is...
    Resource Type:
    Masters Thesis

  • Nontraditional amorphous oxide semiconductor thin-film transistor fabrication

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued. The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer...
    Resource Type:
    Dissertation
    Full Text:
    Passivation Schemes In 2005 Hong et al. published their results in which they passivated bottom-gate ZTO

  • Ultra low voltage DRAM current sense amplifier with body bias techniques

    Creator:
    Gang, Yung-jin, 1957-
    Abstract:
    The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
    Resource Type:
    Dissertation
    Full Text:
    Koo in Hong-ik University and Hee-chang Kang in National Seoul Industrial University for their

  • Ferroelectric thin film development

    Creator:
    Harman, Taran V.
    Abstract:
    The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and...
    Resource Type:
    Masters Thesis
    Full Text:
    of the spin-solution, and a friend during all of the project. I want to thank David Hong, who

  • Low cost, short wavelenght fiber Bragg grating strain sensor systems

    Creator:
    Vaughan, Lira
    Abstract:
    Fiber Bragg grating sensors have been constantly researched for the last ten years and have finally begun to find use in the commercial market. However, one of the major factors limiting their widespread use is their system cost. Their lightweight, flexibility, electromagnetic immunity, and small size make fiber Bragg grating...
    Resource Type:
    Masters Thesis

  • Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory

    Creator:
    Murali, Santosh
    Abstract:
    Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are potential candidates for a next-generation replacement for flash memory. In this thesis, bipolar resistive switching is reported for the...
    Resource Type:
    Masters Thesis
    Full Text:
    believed that transistor based flash memory will soon approach the end of scaling. To continue a Moore’s

  • Material development for thin-film transistors

    Creator:
    Archila, Kevin Alexander
    Abstract:
    The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
    Resource Type:
    Masters Thesis
    Full Text:
    -Si:H is soon approaching (due to its low mobility of < 1 cm2V−1s−1), as consumer demand for bigger

  • Large Scale Tensor Decomposition Algorithms Using Block-randomized Stochastic Proximal Gradient

    Creator:
    Gao, Cheng
    Abstract:
    We consider the problem of computing the cannonical polyadic decomposition (CPD) for large-scale dense tensors. This work is a combination of alternating least squares and fiber sampling. Data sparsity can be leveraged to handle large tensor CPD, but this route is not feasible for dense data. Inspired by stochastic optimization's...
    Resource Type:
    Masters Thesis

  • Quantum dot plasmon coupling : Fundamental study and applications

    Creator:
    Kannegulla, Akash
    Abstract:
    The dissertation focuses on the engineering of light-matter interaction using plasmonic nanoparticles and metamaterials to achieve enhanced luminescence and based on which to improve the performance of biosensing and light-emitting technologies. We designed and fabricated a spectrum of nanostructures to exhibit particular dispersion relations capable of controlling the spontaneous emission...
    Resource Type:
    Dissertation

  • Electrical characterization of silicon and silicon dioxide materials

    Creator:
    Sze, Wing-Il
    Abstract:
    The major goal of this research work was to develop better electrical measurements for the evaluation of silicon material quality. The first approach investigated was the Zerbst generation lifetime measurement technique. It was demonstrated that the error in the estimation of the generation lifetime obtained with this technique could be...
    Resource Type:
    Dissertation
    Full Text:
    about 100A will soon become common in high density MOS circuits. The integrity of Si02 is therefore a