Index Catalog // ScholarsArchive@OSU

Creator:: Yang, Fanling Hsu
Abstract:: The electrical properties of ion-implanted GaAs FET channels are investigated by two methods. First, the channel current (I) as a function of voltage (V) is examined at different temperatures and using different voltage ramp rates. The standard FET I-V curve, which can be observed on a commercial curve tracer, is...
Resource Type:: Dissertation
Full Text:: model based on a more realistic trapezoidal doping profile is derived and simulated. The simulation

Creator:: Rao, Mulpuri Venkata
Resource Type:: Dissertation
Full Text:: spectra. Cr doping seems to produce a donor-like center with an apparent ionization energy of 24 meV. It

Creator:: Lin, Shijia
Abstract:: Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
Resource Type:: Masters Thesis
Full Text:: using atomic layer deposition (ALD). Due to potential nucleation delays, doping and formation of

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