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Filtering by: Committee Member Swanson, David K. Remove constraint Committee Member: Swanson, David K. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • Power-efficient two-step pipelined analog-to-digital conversion

    Creator:
    Lee, Ho-Young
    Abstract:
    Hand-held devices are among the most successful consumer electronics in modern society. Behind these successful devices, lies a key analog design technique that involves high-performance analog-to-digital conversion combined with very low power consumption. This dissertation presents two different approaches to achieving high power efficiency from a two-step pipelined architecture, which...
    Resource Type:
    Dissertation
    Full Text:
    life. I would like to express my appreciation to Professor David Hackleman in the school of CBEE

  • High efficiency delta-sigma modulation data converters

    Creator:
    Lee, Kyehyung
    Abstract:
    Enabled by continued device scaling in CMOS technology, more and more functions that were previously realized in separate chips are getting integrated on a single chip nowadays. Integration on silicon has opened the door to new portable wireless applications, and initiated a widespread use of these devices in our common...
    Resource Type:
    Dissertation
    Full Text:
    , Professor Pavan Kumar Hanumolu, Professor Albrecht Jander, and Professor David McIntyre for their

  • Inorganic thin-film solar cells

    Creator:
    Spies, Jack Alexander
    Abstract:
    The primary objective of this thesis is to explore new absorber and p-type window layer materials for thin-film solar cell applications. A new thin-film electron beam deposition system has been installed, is now operational, and has been used to deposit several types of solar cell absorber layers. Material investigations include...
    Resource Type:
    Masters Thesis

  • Ultra low voltage DRAM current sense amplifier with body bias techniques

    Creator:
    Gang, Yung-jin, 1957-
    Abstract:
    The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
    Resource Type:
    Dissertation
    Full Text:
    Professor Ben Lee, David G. Ullman, S. Subramanian, Vijai K. Tripathi, Shih-Lien Lu, and Andreas Weisshaar