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Filtering by: Creator Rothery, P. Remove constraint Creator: Rothery, P. Degree Field Electrical and Electronics Engineering Remove constraint Degree Field: Electrical and Electronics Engineering Rights Statement Copyright Not Evaluated Remove constraint Rights Statement: Copyright Not Evaluated

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  • Properties of flash-evaporated gallium arsenide and gallium phosphide epitaxial films

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    The properties of flash- evaporated films of GaAs and GaP were studied in this investigation. Films were grown at various substrate temperatures, source temperatures, source-to-substrate distances and rates of deposition and were evaluated as to their structural, optical and electric properties. It was found that substrate temperature was the major...
    Resource Type:
    Dissertation
    Full Text:
    , additional doping was incorporated in the evaporant. Tin was added to n -type wafers and zinc to p -type