Index Catalog // ScholarsArchive@OSU

Noise measurements, models and analysis in GaAs MESFETs circuit design

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Dissertation
Full Text:: semiconductor and the oxide [8]. Explanations of the origin of 1/f noise in GaAs devices are varied and this

CMOS low noise amplifier design utilizing monolithic transformers

Creator:: Zhou, Jianjun J.
Abstract:: Full integration of CMOS low noise amplifiers (LNA) presents a challenge for low cost CMOS receiver systems. A critical problem faced in the design of an RF CMOS LNA is the inaccurate high-frequency noise model of the MOSFET implemented in circuit simulators such as SPICE. Silicon-based monolithic inductors are another...
Resource Type:: Dissertation
Full Text:: of the induced gate current noise in MOS transistor. 20 2.3 Small-signal noise circuit of a MOS

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Creator:: Prasad, S. Jayasimha
Resource Type:: Dissertation
Full Text:: the GaAs MESFET (Metal-Semiconductor Field Effect 2 Transistor) technology has evolved in recent

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Creator:: Haddad, Homayoon
Resource Type:: Dissertation
Full Text:: submicron Metal-Oxide-Semiconductor Field Effect Transistor development. As the complexity of new

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

Creator:: Lee, Mankoo
Abstract:: A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
Resource Type:: Dissertation
Full Text:: ofessor Forbes A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET

A P-well GaAs MESFET technology

Creator:: Canfield, Philip C.
Abstract:: The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
Resource Type:: Dissertation
Full Text:: -semiconductor field effect transistor (MESFET) technology by deviations of the semi- insulating substrate

Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors

Creator:: Kollipara, Ravindranath Tagore
Abstract:: High speed photodetectors are a necessary element in broad band digital and analog optical communication systems. In this thesis easily integrable planar high speed photodetectors made on undoped semi-insulating (SI) GaAs substrates are modeled and tested. The fabrication process of the detectors is fully compatible with GaAs metal-semiconductor field effect...
Resource Type:: Dissertation
Full Text:: process of the detectors is fully compatible with GaAs metal-semiconductor field effect transistor

Analysis and modeling of electrically long MESFETS and coupled schottky lines

Creator:: Mohammed, Ahmed Sarhan
Abstract:: The properties of linear active coupled lines consisting of electrically long GaAs MESFET structures are investigated for possible applications as traveling-wave broad-band amplifiers. In addition, the nonlinear coupled Schottky lines are studied for applications as voltage tunable circuit elements. The analysis of the general active asymmetric coupled transmission lines in...
Resource Type:: Dissertation
Full Text:: ): channel length (length of region I, II). MESFET Metal-Semiconductor Field-Effect Transistor. MOSFET

Ultra low voltage DRAM current sense amplifier with body bias techniques

Creator:: Gang, Yung-jin, 1957-
Abstract:: The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
Resource Type:: Dissertation
Full Text:: have only limited current drive capability. The bipolar junction transistor(BJT) has a collector

ScholarsArchive@OSU

Noise measurements, models and analysis in GaAs MESFETs circuit design

CMOS low noise amplifier design utilizing monolithic transformers

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

A P-well GaAs MESFET technology

Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors

Analysis and modeling of electrically long MESFETS and coupled schottky lines

Ultra low voltage DRAM current sense amplifier with body bias techniques

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