Search Constraints

Start Over
Filtering by: Advisor Vechten, James A. Van Remove constraint Advisor: Vechten, James A. Van Degree Level Doctoral Remove constraint Degree Level: Doctoral

Search Results

  • An examination of point defects and atomic diffusion in silicon

    Creator:
    Monson, Tyrus K.
    Abstract:
    The self-interstitial defect is commonly regarded as important in regulating diffusion in silicon. A review of the literature reveals that the scientific bases for invoking the self-interstitial defect are weak, while an alternate defect, the vacancy cluster, has been largely ignored. One argument which has been used to establish dominance...
    Resource Type:
    Dissertation
    Full Text:
    Diffusion in Silicon. Abstract approved: James A. Van Vechten The self-interstitial defect is commonly