Four methods for the simultaneous fabrication of
field-effect and bipolar transistors have been investigated.
The basic process involves obtaining two different
junction depths by a single diffusion. This was
accomplished by the techniques of (1) partial masking,
(2) two depositions, (3) etched channels, and (4) oxide
depletion.
The first three...
The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices
made with single-layer aluminum-oxide films and double-layer
films which were made by evaporating aluminum oxide
over thermally-grown silicon dioxide as gate insulation
have been investigated. Vacuum-evaporated aluminum oxide
has features which are suitable for fabricating MOS devices....
The MOS tetrode transistor is studied in this project.
This device is ideally suited for high frequency and
switching application.
In effect it is the solid state
analogy of a multigrid vacuum tube performing a very useful
multigrid function.
A new structure is developed for
p-channel 10 ohm-cm. silicon substrate...
This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
This thesis is a development of two sets of equations predicting the switching times of a saturated transistor. The first set of equations defines the rise, storage, and fall times at a single operating point where the transistor beta, cutoff frequency and collector capacitance are known. The second set of...
The demand for transistor circuitry to perform within more
exacting specifications has created the need for a method to accurateIy predict transistor circuit performance. A method utilizing an
electronic digital computer for the analysis of direct-coupled transistor
amplifiers is explained in this paper.
The dc bias levels and the mid-band...
This thesis considers the worst-case design of transistor
circuits for the realization of Majority Logic.
First the meaning of Majority Logic is discussed. The requirement
of an odd number of inputs for the realization of Majority
Logic is justified. The usefulness of Majority Logic in synthesizing
a Boolean expression is...