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Filtering by: Alternative title ssim Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Remove constraint Alternative title ssim: Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Degree Name Doctor of Philosophy (Ph.D.) Remove constraint Degree Name: Doctor of Philosophy (Ph.D.)

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  • Investigation of metal-insulator-metal (MIM) and nanolaminate barrier MIIM tunnel devices fabricated via atomic layer deposition

    Creator:
    Alimardani, Nasir
    Abstract:
    Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
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    Dissertation
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    Diodes with Ta2O5 and Nb2O5 Dielectrics Deposited by Atomic Layer Deposition

  • Investigation of Energy Barrier Heights within Metal-insulator-metal Devices via Internal Photoemission Spectroscopy

    Creator:
    Jenkins, Melanie A.
    Abstract:
    Metal-insulator-metal (MIM) and dual-insulator MIM (MIIM) devices are used in rectennas, hot-electron transistors, single electron transistors, resistive random access memory (RRAM), and capacitors. The performance of these devices relies heavily on the energy barrier height at each metal-insulator interface. Thus, determination of the in-situ electron energy barrier at each interface...
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    Dissertation
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    on Metal-Insulator-Metal Tunnel Diodes with Atomic Layer Deposited Al2O3 Tunnel Barriers,” J. Vac

  • Electronic Conduction Mechanisms in Insulators

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
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    Dissertation
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    -enhanced atomic layer deposition, and solution-deposition. It is found that insulators deposited with

  • Electronic device and nanolaminate application of amorphous metal thin films

    Creator:
    Cowell, E. William, III
    Abstract:
    The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi and TiAl, are investigated in both two-terminal electrical device and nanolaminate applications. Material properties including composition, atomic order, surface morphology, surface potential, and electrical resistivity are explored....
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    Dissertation
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    Metal-Insulator-Metal Diode Conduction Mechanisms . . . . . . . . . . . . 20 2.2.3 Symmetric Tunneling

  • Atomic Layer Processing for Next-Generation Microelectronic Materials

    Creator:
    Holden, Konner E. K.
    Abstract:
    Atomic layer deposition (ALD) is an enabling technique for many new micro- and nanoscale technologies. The self-limiting surface chemical reactions by which ALD fundamentally operates give rise to uniquely high precision (atomic) control over deposited film thickness, uniformity over large areas, and conformality over complex and extreme topographies. One such...
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    Dissertation
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    ......................................................................................................... 46 4 Precision Defect Engineering of Metal/Insulator/Metal Diodes using Atomic Layer Deposition

  • Development and Applications of Oxide Thin Films using Atomic Layer Deposition and Prompt Inorganic Condensation

    Creator:
    Smith, Sean Weston
    Abstract:
    In the first part of this work, thin films of Al₂O₃ deposited via atomic layer deposition (ALD) are demonstrated to improve the thermal stability of cellulose nanocrystal (CNC) aerogels. ALD is a chemical vapor deposition (CVD) like method in which sequential precursor exposures and self-limited surface reactions produce a conformal...
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    Dissertation
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    of Oxide Thin Films using Atomic Layer Deposition and Prompt Inorganic Condensation by

  • Wide band gap semiconductors and insulators : synthesis, processing and characterization

    Creator:
    Hersh, Peter A.
    Abstract:
    The work presented here is focused on applying basic principles of solid-state chemistry to the study and development of new wide band-gap semiconductors and insulators for photovoltaic and electronic-device applications. Analysis of crystal structure, band structure, optical band gap, morphology and transport properties provides fundamental insight into materials performance as...
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    Dissertation
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    helped with work presented in Chapters 3-5 including thin film deposition and optical and electrical

  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
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    Dissertation
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    -insulator-metal (MIM) tunnel diodes [19, 20, 21, 22, 23] and as a gate metal in a MOSFET [24, 25]. For a

  • Reaction Pathways of Oxo-Hydroxo Group 5 Clusters to Metal Oxide Thin Films

    Creator:
    Mansergh, Ryan H.
    Abstract:
    Oxo-hydroxo Group 5 metal clusters are an untapped resource to study and advance aqueous solution processing of metal oxide thin films. The tetramethylammonium (TMA) hexatantalate salt (TMA6[H2Ta6O19]) yields dense Ta2O5 films (~95% of the bulk ß-Ta2O5 density) with atomically smooth surfaces (<4 Å root mean square surface roughness). This same...
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    Dissertation
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    Residual Stress and Optical Properties in Ta2O5 Thin Films Deposited by Single and Dual Ion Beam

  • Electronic Conduction and Ionic Diffusion in (Bi₀.₅Na₀.₅)TiO₃-(Bi₀.₅K₀.₅)TiO₃-based Thin Films, Electronic Conduction and Ionic Diffusion in (Bi0.5Na0.5)TiO3-(Bi0.5K0.5)TiO3-based Thin Films

    Creator:
    Walenza-Slabe, Joel
    Abstract:
    Solid solutions based on the perovskite ferroelectrics Bi₀.₅Na₀.₅TiO₃ (BNT) and Bi₀.₅K₀.₅TiO₃ (BKT) might someday replace current Pb-based ferroelectric and piezoelectric devices. This is one goal of the Restrictions on Hazardous Substances (RoHS) guidelines seeking to limit Pb in consumer devices. Although the Bi-based ferroelectrics are well suited to the task...
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    Dissertation
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    beyond 180 °C and 400 kV/cm. Additionally, ionic conduction processes also play a role in