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Filtering by: Advisor Engle, John F. Degree Name Honors Bachelor of Science (H.B.S.)

I-V Characteristics of Al/HfO2/TaN RRAM Devices

Creator:

Valdivia, Arturo H.

Abstract:

The memristor is a resistive switching random access memory (RRAM) with a basic metal/insulator/metal (MIM) structure. These nano devices are nonvolatile, have a conceptually simple crossbar device structure, are power efficient and have the capability of switching between high and low resistance states in nanoseconds making them promising to replace...

Resource Type:

Honors College Thesis

Full Text:

: _ ____________________________________________________________________________ John F. Conley Jr. I-V Characteristics of Al/HfO2/TaN RRAM Devices
Simulated and Experimental Characteristics of Analysis Techniques for ZrCuAlNi/AlOx/Al Metal-Insulator-Metal Tunnel Diodes

Creator:

Tan, Cheng

Abstract:

This project examines the results of current-voltage conduction mechanism analysis techniques simulated under assumed conduction conditions. Thermionic emission and Fowler-Nordheim tunneling conditions are simulated and analyzed. The resulting plots show how devices behave under different condition mechanisms. The effects of different conduction mechanisms on the results of various analysis techniques...

Resource Type:

Honors College Thesis

Full Text:

May 31st, 2012. APPROVED: Mentor, Dr. John F. Conley Jr. representing Electrical and Computer Engi
Nanomechanical Characterization of Atomic Layer Deposition Coatings for Biomedical Applications

Creator:

Bauer, Nicole Lea

Abstract:

Atomic Layer Deposition (ALD) is a promising technique for the production of biologically safe, wear resistant and corrosion protective coatings for orthopedic applications. In this work, the impact of coating thickness and surface preparation on the hardness (H), elastic modulus (E), wear resistance, and delamination of ALD Al2O3 films is...

Resource Type:

Honors College Thesis