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  • Inorganic thin-film solar cells

    Creator:
    Spies, Jack Alexander
    Abstract:
    The primary objective of this thesis is to explore new absorber and p-type window layer materials for thin-film solar cell applications. A new thin-film electron beam deposition system has been installed, is now operational, and has been used to deposit several types of solar cell absorber layers. Material investigations include...
    Resource Type:
    Masters Thesis
    Full Text:
    : Inorganic Thin-Film Solar Cells Abstract approved: John F. Wager The primary objective of this thesis is

  • Contact resistance and stability assessment of oxide-based thin film transistors

    Creator:
    Hung, Celia M.
    Abstract:
    This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
    Resource Type:
    Masters Thesis
    Full Text:
    THIN-FILM TRANSISTORS ..37 4.1 Device fabrication

  • Investigation of low temperature solution-based deposition process for flexible electronics

    Creator:
    Chang, Yu-Jen
    Abstract:
    The critical contribution of this dissertation is to provide a better understanding of the fundamental Chemical Bath Deposition (CBD) growth kinetic and mechanism for the well known II-VI semiconductor CdS using the newly developed continuous flow microreactor. This continuous flow microreactor provides the temporal resolution to control the homogeneous reaction...
    Resource Type:
    Dissertation
    Full Text:
    nanocrystalline CdS semiconductor thin films at low temperature (80 oC). Enhancement-mode functional thin film

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 30 3. DEVICE DEVELOPMENT, FABRICATION, AND CHARACTERIZATION 31 3.1 Thin film processing

  • Solution deposition and characterization of the thin film inorganic materials

    Creator:
    Özmen, Bahar
    Abstract:
    The general emphasis of this work has been synthesis, characterization, and applications of n- and p-type inorganic oxide thin films that are deposited from solutions. In particular, a study of n-type transparent semiconductor films of tin (IV) oxide and zinc-doped tin (IV) oxide has been performed by spin coating. Solution...
    Resource Type:
    Masters Thesis
    Full Text:
    presented on July 16, 2007 Title: Solution Deposition and Characterization of the Thin Film

  • Growth and characterization of zinc ferrite thin films for high frequency applications

    Creator:
    Hu, Jiqing
    Abstract:
    Ferrites have been used for various high frequency applications as bulk materials. These applications, however, are limited to large dimension devices. In this thesis, thin film ferrites were deposited from a low temperature solution-based deposition process that is suitable for micro-scale high frequency applications. The low temperature nature of this...
    Resource Type:
    Dissertation
    Full Text:
    limited to large dimension devices. In this thesis, thin film ferrites were deposited from a low

  • Thin-film transistors with amorphous oxide channel layers

    Creator:
    Grover, Manan S.
    Abstract:
    In recent years, a new class of high-performance thin-film transistors (TFTs) has emerged comprising amorphous oxide channel materials composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n ≥ 4, where 'n' refers to the row of the periodic table) electronic configuration. This thesis is devoted to the fabrication and characterization of...
    Resource Type:
    Masters Thesis

  • Discrete trap modeling of thin-film transistors

    Creator:
    Yerubandi, Ganesh Chakravarthy
    Abstract:
    A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
    Resource Type:
    Masters Thesis
    Full Text:
    September 1, 2005. Title: Discrete Trap Modeling of Thin-film Transistors. Abstract approved

  • Development of solution-based reaction processes for micro- and nano-structured semiconductors

    Creator:
    Lee, Doo-Hyoung
    Abstract:
    The focus of this study is to develop a general and low-cost solution-based process to fabricate micro- and nano-structured semiconductors that are suitable for electronics. This process uses simple metal halide precursors dissolved in a solvent (organic or aqueous) and is capable of forming uniform and continuous thin films via...
    Resource Type:
    Dissertation
    Full Text:
    of transparent thin film transistor, IZTO-TTFT device structure (left) and real device image(right

  • Transparent electronics : thin-film transistors and integrated circuits

    Creator:
    Presley, Rick E.
    Abstract:
    This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
    Resource Type:
    Masters Thesis
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 4. TIN OXIDE TRANSPARENT THIN-FILM TRANSISTORS . . . . . . . . . . . . 35 4.1 SnO2 TTFT device