Index Catalog // ScholarsArchive@OSU

Creator:: Patterson, Eric A., Kwon, Seunghwa, Huang, Chien-Chih, and Cann, David P.
Abstract:: The dielectric spectra of CaCu₃Ti₄O₁₂ is characterized by a large permittivity (εᵣ>10 000) with only a weak dependence on temperature over the temperature range 200–400 K. In this work, doping with 0.1–1.0 wt % ZrO₂ has been shown to dramatically reduce the dielectric loss. At 0.5 wt % ZrO₂, tan...
Resource Type:: Article

Creator:: Paik, Hanjong, Hwang, Hosung, No, Kwangsoo, Kwon, Seunghwa, and Cann, David P.
Abstract:: The crystal structure and multiferroic properties of single-phase (Bi₀.₉La₀.₁)FeO₃–Ba(Fe₀.₅Nb₀.₅)O₃ ceramics were investigated. The rhombohedral-type structure of 1.0(Bi₀.₉La₀.₁)FeO₃) was transformed to a monoclinic-type structure for the 0.5(Bi₀.₉La₀.₁)FeO₃–0.5Ba(Fe₀.₅Nb₀.₅)O₃) composition. It shows the coexistence of ferroelectricity and magnetism at room temperature, represented by a high dielectric constant with ferroelectric hysteresis and clear magnetic...
Resource Type:: Article

Creator:: Launey, M. E., Kruzic, J. J., Li, C., and Busch, R.
Abstract:: Deformation of metallic glasses requires the existence of free volume to allow atomic movement under mechanical loading. Accordingly, quantification of the free volume state of the alloy is crucial to understand it's mechanical behavior. By annealing below the glass transition temperature, the free volume of a Zr₄₄Ti₁₁Ni₁₀Cu₁₀Be₂₅ bulk metallic glass...
Resource Type:: Article

Creator:: Vallery, R. S., Liu, M., Gidley, D. W., Launey, M. E., and Kruzic, J. J.
Abstract:: Depth-profiled Doppler broadening spectroscopy of positron annihilation on the cyclic fatigue-induced fracture surfaces of three amorphous Zr₄₄Ti₁₁Ni₁₀Cu₁₀Be₂₅ metallic glass specimens reveals the presence of a 30–50 nm layer of increased free volume that is generated by the propagating fatigue crack tip. The presence and character of this fatigue transformation zone...
Resource Type:: Article

Creator:: Weisshaar, A., Lary, J., Goodnick, S. M., and Tripathi, V. K.
Abstract:: We have used the modal expansion of the wave function in the discontinuity region based on the superposition principle together with a mode-matching technique to investigate the transmission characteristics of semiconductor quantum wire structures with discontinuities. Our calculations compare quite well with published results for the theoretical transmission coefficient and...
Resource Type:: Article

Creator:: Wu, J. C., Wybourne, M. N., Yindeepol, W., Weisshaar, A., and Goodnick, S. M.
Abstract:: Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of...
Resource Type:: Article

Creator:: Park, Sangmoon, Keszler, Douglas A., Valencia, Melinda M., Hoffman, Randy L., Bender, Jeffrey P., and Wager, John F.
Abstract:: p-type conducting films of α- BaCu₂S₂ have been deposited onto glass and KBr substrates, yielding a conductivity of 17 S/cm and a Hall mobility of 3.5 cm²/Vs. For a 430-nm-thick film, the optical transparency approaches 90% in the visible portion of the spectrum at 650 nm, and a transparency of...
Resource Type:: Article

Creator:: Liliental, Z., Wager, J. F., and Goodnick, S. M.
Abstract:: InP/SiO₂ interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO₂ desposition, and some evidence...
Resource Type:: Article

Creator:: Lite, K., Thuemler, R. L., Plant, T. K., Wager, J. F., Morton, D. C., Sun, S. S., and Mauch, R. H.
Abstract:: Vacuum ultraviolet reflectivity measurements of three thin-film electroluminescent phosphors, zinc sulfide (ZnS), strontium sulfide (SrS), and strontium-calcium thiogallate (Sr₀.₄₅Ca₀.₅₅Ga₂S₄), are reported using thin-film samples. Measured ZnS reflectivity peak positions are in agreement with values previously reported in the literature. SrS room temperature reflectivity measurements are found to be consistent with...
Resource Type:: Article

Creator:: Hoffman, R. L., Norris, Benjamin J., and Wager, J. F.
Abstract:: Highly transparent ZnO-based thin-film transistors (TFTs) are fabricated with optical transmission (including substrate) of ~75% in the visible portion of the electromagnetic spectrum. Current–voltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ~10⁷. Threshold voltages and channel mobilities of devices...
Resource Type:: Article

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