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Filtering by: Advisor Porter, J. David Remove constraint Advisor: Porter, J. David Language English [eng] Remove constraint Language: English [eng] Subject Gallium arsenide semiconductors Remove constraint Subject: Gallium arsenide semiconductors

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  • Design of GaAs monolithically integrated optical receiver amplifier

    Creator:
    Ju, Shu-ing
    Resource Type:
    Masters Thesis
    Full Text:
    Receiver Amplifier. Abstract approved: Redacted for Privacy 7- David J. Allstot A GaAs optical receiver

  • Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

    Creator:
    Or, Pee-Keong
    Abstract:
    The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...
    Resource Type:
    Masters Thesis
    Full Text:
    approved: Redacted for Privacy David Allstot The characteristic of the subthreshold current in a GaAs

  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation
    Full Text:
    sum over j accounts for all the residual shallow donors. In addition boron and nitrogen incorporated