Index Catalog // ScholarsArchive@OSU

High aspect ratio nanoimprinted grooves of poly(lactic-co-glycolic acid) control the length and direction of retraction fibers during fibroblast cell division

Creator:: Su, Yi-Hsuan, Chiang, Po-Chieh, Cheng, Li-Jing, Lee, Chau-Hwang, Swami, Nathan S., and Chou, Chia-Fu
Abstract:: Retraction fibers (RFs) determine orientation of the cell division axis and guide the spreading of daughter cells. Long and unidirectional RFs, which are especially apparent during mitosis of cells in three-dimensional (3D) environments, enable improved control over cell fate, following division. However, 3D gel environments lack the cues necessary for...
Resource Type:: Article
Full Text:: fibroblast cell division. Biointerphases, 10(4), 041008. doi:10.1116/1.4936589 10.1116/1.4936589 Springer

Bipolar resistive switching in an amorphous zinc tin oxide memristive device

Creator:: Rajachidambaram, Jaana S., Murali, Santosh, Conley, John F. Jr., Golledge, Stephen L., and Herman, Gregory S.
Abstract:: The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching ratios >10(4) and long retention times of >10(4)...
Resource Type:: Article
Full Text:: reactions occur at the Al/ZTO interface. VC 2013 American Vacuum Society. [http://dx.doi.org/10.1116

Amorphous In-Ga-Zn-O thin-film transistors fabricated by microcontact printing

Creator:: Du, Xiaosong, Frederick, Ryan T., Li, Yajuan, Zhou, Zheng, Stickle, William F., and Herman, Gregory S.
Abstract:: The authors present a facile, low-cost methodology to fabricate high-performance In-Ga-Zn-O (IGZO) bottom contact, bottom gate thin-film transistors (TFTs) by soft lithography. The IGZO channel and indium tin oxide (ITO) source and drain were patterned using microcontact printing of an octadecylphosphonic acid self-assembled monolayer (SAM). A polymer stamp was used...
Resource Type:: Article
Full Text:: & Technology B, 33(5), 052208. doi:10.1116/1.4929984 10.1116/1.4929984 American Institute of Physics

Full membrane spanning self-assembled monolayers as model systems for UHV-based studies of cell-penetrating peptides

Creator:: Franz, Johannes, Graham, Daniel J., Schmüser, Lars, Baio, Joe E., Lelle, Marco, Peneva, Kalina, Müllen, Klaus, Castner, David G., Bonn, Mischa, and Weidnera, Tobias
Abstract:: Biophysical studies of the interaction of peptides with model membranes provide a simple yet effective approach to understand the transport of peptides and peptide based drug carriers across the cell membrane. Herein, the authors discuss the use of self-assembled monolayers fabricated from the full membrane-spanning thiol (FMST) 3-((14-((40-((5-methyl-1-phenyl-35-(phytanyl)oxy- 6,9,12,15,18,21,24,27,30,33,37-undecaoxa-2,3-dithiahenpentacontan-51-yl)oxy)-[1,10-biphenyl]-4- yl)oxy)tetradecyl)oxy)-2-(phytanyl)oxy...
Resource Type:: Article
Full Text:: , 10(1), 019009. doi:10.1116/1.4908164 10.1116/1.4908164 American Institute of Physics Publishing

Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison

Creator:: Smith, Sean W., Wang, Wei, Keszler, Douglas A., and Conley, John F., Jr.
Abstract:: A comparison was made of Al₂O₃ films deposited on Si via prompt inorganic condensation (PIC) and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing temperature indicate that the solution-processed PIC films, annealed at 500°C, exhibit lower leakage and roughly equivalent breakdown strength in comparison to ALD films....
Resource Type:: Article
Full Text:: ), 041501. doi:10.1116/1.4874806 10.1116/1.4874806 American Vacuum Society Version of Record http

Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O

Creator:: Austin, Dustin Z., Allman, Derryl, Price, David, Hose, Sallie, Saly, Mark, and Conley, John F., Jr.
Abstract:: Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O at deposition temperatures between 90 and 270°C on Si₃N₄, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi₂O₃ films deposited...
Resource Type:: Article
Full Text:: & Technology A, 32(1), 01A113. doi:10.1116/1.4840835 10.1116/1.4840835 American Institute of Physics

Conduction processes in metal–insulator–metal diodes with Ta₂O₅ and Nb₂O₅ insulators deposited by atomic layer deposition

Creator:: Alimardani, Nasir, McGlone, John M., Wager, John F., and Conley, John F., Jr.
Abstract:: Metal–insulator–metal diodes with Nb₂O₅ and Ta₂O₅ insulators deposited via atomic layer deposition are investigated. For both Nb₂O₅ and Ta₂O₅, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus...
Resource Type:: Article
Full Text:: Vacuum Science & Technology A, 32(1), 01A122. doi:10.1116/1.4843555 10.1116/1.4843555 American

Improved oxidation resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels

Creator:: Smith, Sean W., Buesch, Christian, Matthews, David J., Simonsen, John, and Conley, John F., Jr.
Abstract:: Cellulose nanocrystal (CNC) aerogels are coated with thin conformal layers of Al₂O₃ using atomic layer deposition to form hybrid organic/inorganic nanocomposites. Electron probe microanalysis and scanning electron microscopy analysis indicated the Al₂O₃ penetrated more than 1500 μm into the aerogel for extended precursor pulse and exposure/purge times. The measured profile...
Resource Type:: Article
Full Text:: . Journal of Vacuum Science & Technology A, 32(4), 041508. doi:10.1116/1.4882239 10.1116/1.4882239

Atomic layer deposition of two dimensional MoS₂ on 150 mm substrates

Creator:: Valdivia, Arturo, Tweet, Douglas J., and Conley, John F. Jr
Abstract:: Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS₂ uniformly across 150mm diameter SiO₂/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl5 and H₂S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E¹₂g) and out-of-plane...
Resource Type:: Article
Full Text:: 2016 American Vacuum Society. [http://dx.doi.org/10.1116/1.4941245] I. INTRODUCTION The lack of a

Differential surface activation of the A1 domain of von Willebrand factor

Creator:: Tronic, Elaine H., Yakovenko, Olga, Weidner, Tobias, Baio, Joe E., Penkala, Rebecca, Castner, David G., and Thomas, Wendy E.
Abstract:: The clotting protein von Willebrand factor (VWF) binds to platelet receptor glycoprotein Ibα (GPIbα) when VWF is activated by chemicals, high shear stress, or immobilization onto surfaces. Activation of VWF by surface immobilization is an important problem in the failure of cardiovascular implants, but is poorly understood. Here, the authors...
Resource Type:: Article
Full Text:: (http://creativecommons.org/licenses/by /4.0/). [http://dx.doi.org/10.1116/1.4943618] I. INTRODUCTION

ScholarsArchive@OSU

High aspect ratio nanoimprinted grooves of poly(lactic-co-glycolic acid) control the length and direction of retraction fibers during fibroblast cell division

Bipolar resistive switching in an amorphous zinc tin oxide memristive device

Amorphous In-Ga-Zn-O thin-film transistors fabricated by microcontact printing

Full membrane spanning self-assembled monolayers as model systems for UHV-based studies of cell-penetrating peptides

Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison

Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O

Conduction processes in metal–insulator–metal diodes with Ta₂O₅ and Nb₂O₅ insulators deposited by atomic layer deposition

Improved oxidation resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels

Atomic layer deposition of two dimensional MoS₂ on 150 mm substrates

Differential surface activation of the A1 domain of von Willebrand factor

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