Index Catalog // ScholarsArchive@OSU

Conduction processes in metal–insulator–metal diodes with Ta₂O₅ and Nb₂O₅ insulators deposited by atomic layer deposition

Creator:: Alimardani, Nasir, McGlone, John M., Wager, John F., and Conley, John F., Jr.
Abstract:: Metal–insulator–metal diodes with Nb₂O₅ and Ta₂O₅ insulators deposited via atomic layer deposition are investigated. For both Nb₂O₅ and Ta₂O₅, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus...
Resource Type:: Article
Full Text:: Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic

Investigation of metal-insulator-metal (MIM) and nanolaminate barrier MIIM tunnel devices fabricated via atomic layer deposition

Creator:: Alimardani, Nasir
Abstract:: Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
Resource Type:: Dissertation
Full Text:: Diodes with Ta2O5 and Nb2O5 Dielectrics Deposited by Atomic Layer Deposition

Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

Creator:: Alimardani, Nasir, King, Sean W., French, Benjamin L., Tan, Cheng, Lampert, Benjamin P., and Conley, John F., Jr.
Abstract:: The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb2O5, Ta2 O5, ZrO2, HfO2, Al2 O3, and SiO2 amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss...
Resource Type:: Article
Full Text:: - down occurs. The Ta2O5 and Nb2O5 diodes are roughly symmetric. The abrupt changes in fNL with voltage

Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

Creator:: Alimardani, Nasir and Conley, John F., Jr.
Abstract:: Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al₂O₃-Ta₂O₅ bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current...
Resource Type:: Article
Full Text:: dominated by thermal emission based conduction.18 Both insulators are deposited via atomic layer deposition

Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

Creator:: Lin, Shijia
Abstract:: Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
Resource Type:: Masters Thesis
Full Text:: area deposition etc. In this work, HfO2 and Nb2O5 stack are deposited by ALD on TaN substrate and Al

Barrier height estimation of asymmetric metal-insulator-metal tunneling diodes

Creator:: Cowell, E. William, III, Muir, Sean W., Keszler, Douglas A., and Wager, John F.
Abstract:: See article for Abstract.
Resource Type:: Article
Full Text:: MIM diode insulator. Two MIM diodes fabricated with concurrently deposited lower amorphous metal

Investigation of Energy Barrier Heights within Metal-insulator-metal Devices via Internal Photoemission Spectroscopy

Creator:: Jenkins, Melanie A.
Abstract:: Metal-insulator-metal (MIM) and dual-insulator MIM (MIIM) devices are used in rectennas, hot-electron transistors, single electron transistors, resistive random access memory (RRAM), and capacitors. The performance of these devices relies heavily on the energy barrier height at each metal-insulator interface. Thus, determination of the in-situ electron energy barrier at each interface...
Resource Type:: Dissertation
Full Text:: on Metal-Insulator-Metal Tunnel Diodes with Atomic Layer Deposited Al2O3 Tunnel Barriers,” J. Vac

Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

Creator:: Klarr, Tyler D.
Abstract:: As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
Resource Type:: Masters Thesis
Full Text:: insulators deposited via atomic layer deposition (ALD) enables reproducible fabrication of MIM diodes with

Electronic Conduction Mechanisms in Insulators

Creator:: Chiang, Tsung-Han
Abstract:: The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
Resource Type:: Dissertation
Full Text:: -enhanced atomic layer deposition, and solution-deposition. It is found that insulators deposited with

Electronic device and nanolaminate application of amorphous metal thin films

Creator:: Cowell, E. William, III
Abstract:: The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi and TiAl, are investigated in both two-terminal electrical device and nanolaminate applications. Material properties including composition, atomic order, surface morphology, surface potential, and electrical resistivity are explored....
Resource Type:: Dissertation
Full Text:: Metal-Insulator-Metal Diode Conduction Mechanisms . . . . . . . . . . . . 20 2.2.3 Symmetric Tunneling

ScholarsArchive@OSU

Conduction processes in metal–insulator–metal diodes with Ta₂O₅ and Nb₂O₅ insulators deposited by atomic layer deposition

Investigation of metal-insulator-metal (MIM) and nanolaminate barrier MIIM tunnel devices fabricated via atomic layer deposition

Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

Barrier height estimation of asymmetric metal-insulator-metal tunneling diodes

Investigation of Energy Barrier Heights within Metal-insulator-metal Devices via Internal Photoemission Spectroscopy

Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

Electronic Conduction Mechanisms in Insulators

Electronic device and nanolaminate application of amorphous metal thin films

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