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  • Investigation of metal-insulator-metal (MIM) and nanolaminate barrier MIIM tunnel devices fabricated via atomic layer deposition

    Creator:
    Alimardani, Nasir
    Abstract:
    Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
    Resource Type:
    Dissertation
    Full Text:
    Diodes with Ta2O5 and Nb2O5 Dielectrics Deposited by Atomic Layer Deposition

  • Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

    Creator:
    Lin, Shijia
    Abstract:
    Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
    Resource Type:
    Masters Thesis
    Full Text:
    area deposition etc. In this work, HfO2 and Nb2O5 stack are deposited by ALD on TaN substrate and Al

  • Investigation of Energy Barrier Heights within Metal-insulator-metal Devices via Internal Photoemission Spectroscopy

    Creator:
    Jenkins, Melanie A.
    Abstract:
    Metal-insulator-metal (MIM) and dual-insulator MIM (MIIM) devices are used in rectennas, hot-electron transistors, single electron transistors, resistive random access memory (RRAM), and capacitors. The performance of these devices relies heavily on the energy barrier height at each metal-insulator interface. Thus, determination of the in-situ electron energy barrier at each interface...
    Resource Type:
    Dissertation
    Full Text:
    on Metal-Insulator-Metal Tunnel Diodes with Atomic Layer Deposited Al2O3 Tunnel Barriers,” J. Vac

  • Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

    Creator:
    Klarr, Tyler D.
    Abstract:
    As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
    Resource Type:
    Masters Thesis
    Full Text:
    insulators deposited via atomic layer deposition (ALD) enables reproducible fabrication of MIM diodes with

  • Electronic Conduction Mechanisms in Insulators

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
    Resource Type:
    Dissertation
    Full Text:
    -enhanced atomic layer deposition, and solution-deposition. It is found that insulators deposited with

  • Electronic device and nanolaminate application of amorphous metal thin films

    Creator:
    Cowell, E. William, III
    Abstract:
    The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi and TiAl, are investigated in both two-terminal electrical device and nanolaminate applications. Material properties including composition, atomic order, surface morphology, surface potential, and electrical resistivity are explored....
    Resource Type:
    Dissertation
    Full Text:
    Metal-Insulator-Metal Diode Conduction Mechanisms . . . . . . . . . . . . 20 2.2.3 Symmetric Tunneling

  • Nucleation Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates

    Creator:
    Witsell, Shane Mike’ele Williama
    Abstract:
    Nucleation in atomic layer deposition (ALD) determines how many cycles are required to initiate growth and to form a continuous film. Nucleation has been exploited for the formation of nanoparticles, catalysts, and for area-selective ALD. Although sometimes overlooked or misrepresented in ALD reports, nucleation is also critical for multicomponent ALD...
    Resource Type:
    Masters Thesis
    Full Text:
    Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates by Shane Mike’ele Williama

  • Amorphous metal thin films as a platform for solution processing

    Creator:
    Landau, Nicholas P.
    Abstract:
    The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
    Resource Type:
    Masters Thesis
    Full Text:
    . 2.1.3 Conduction in a Metal-Insulator-Metal Diodes Conduction in a MIM diode is generally controlled by

  • Thermally-stable amorphous metal thin films

    Creator:
    McGlone, John M.
    Abstract:
    Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
    Resource Type:
    Masters Thesis
    Full Text:
    estimated by taking the difference of φB2 from the as-deposited ZrCuAlNi diode (shown in Fig. 5.3 (c)) and

  • Atomic Layer Processing for Next-Generation Microelectronic Materials

    Creator:
    Holden, Konner E. K.
    Abstract:
    Atomic layer deposition (ALD) is an enabling technique for many new micro- and nanoscale technologies. The self-limiting surface chemical reactions by which ALD fundamentally operates give rise to uniquely high precision (atomic) control over deposited film thickness, uniformity over large areas, and conformality over complex and extreme topographies. One such...
    Resource Type:
    Dissertation
    Full Text:
    ......................................................................................................... 46 4 Precision Defect Engineering of Metal/Insulator/Metal Diodes using Atomic Layer Deposition