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Filtering by: Subject Metal semiconductor field-effect transistors -- Noise Remove constraint Subject: Metal semiconductor field-effect transistors -- Noise Non-Academic Affiliation Oregon State University. Graduate School Remove constraint Non-Academic Affiliation: Oregon State University. Graduate School Subject Gallium arsenide semiconductors Remove constraint Subject: Gallium arsenide semiconductors

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  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    OF P-CHANNEL GaAs MESFET 1. INTRODUCTION The metal-semiconductor field-effect transistor (MESFET

  • Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

    Creator:
    Or, Pee-Keong
    Abstract:
    The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...
    Resource Type:
    Masters Thesis
    Full Text:
    ]. The inherent high electron mobility makes GaAs Metal Semiconductor Field Effect Transistors (MESFETs

  • Analysis and modeling of GaAs MESFET's for linear integrated circuit design

    Creator:
    Lee, Mankoo
    Abstract:
    A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
    Resource Type:
    Dissertation
    Full Text:
    ofessor Forbes A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET

  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation
    Full Text:
    -semiconductor field effect transistor (MESFET) technology by deviations of the semi- insulating substrate

  • Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors

    Creator:
    Kollipara, Ravindranath Tagore
    Abstract:
    High speed photodetectors are a necessary element in broad band digital and analog optical communication systems. In this thesis easily integrable planar high speed photodetectors made on undoped semi-insulating (SI) GaAs substrates are modeled and tested. The fabrication process of the detectors is fully compatible with GaAs metal-semiconductor field effect...
    Resource Type:
    Dissertation
    Full Text:
    process of the detectors is fully compatible with GaAs metal-semiconductor field effect transistor

  • Wide bandwidth GaAs MESFET amplifier

    Creator:
    Yan, Kai-tuan Kelvin
    Resource Type:
    Masters Thesis
    Full Text:
    parameters from the TriQuint Semiconductor 1 gm depletion mode technology. Wide Bandwidth GaAs MESFET